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CRSG026N10N PDF预览

CRSG026N10N

更新时间: 2024-11-05 15:19:07
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
9页 423K
描述
TO-263-6L

CRSG026N10N 数据手册

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CRSG026N10N  
SkyMOS1ꢀNꢁMOSFETꢀ100V,ꢀ2.3mꢂ,ꢀ212A  
华润微电子(重庆)有限公司  
Features  
Product Summary  
VDS  
100V  
•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS1ꢀtechnology  
•ꢀExtremelyꢀlowꢀonꢁresistanceꢀRDS(on)  
•ꢀExcellentꢀQgxRDS(on)ꢀproduct(FOM)  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria  
RDS(on)  
ID  
2.3mꢂ  
212A  
Applications  
•ꢀMotorꢀcontrolꢀandꢀdrive  
•ꢀBatteryꢀmanagement  
•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)  
100% Avalanche Tested  
CRSG026N10N  
Package Marking and Ordering Information  
Partꢀ#  
Marking  
Package  
ReelꢀSize  
N/A  
TapeꢀWidth  
N/A  
Qty  
Packing  
Tube  
CRSG026N10N  
TOꢁ263ꢁ6L  
50pcs  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
VDS  
Drainꢁsourceꢀvoltage  
100  
V
Continuousꢀdrainꢀcurrent  
TCꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)  
TCꢀ=ꢀ25°Cꢀ(Packageꢀlimit)  
TCꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)  
212  
240  
134  
ID  
A
Pulsedꢀdrainꢀcurrentꢀ(TCꢀ=ꢀ25°C,ꢀtpꢀlimitedꢀbyꢀTjmax  
)
IDꢀpulse  
EAS  
848  
529  
A
mJ  
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25)[1]  
GateꢁSourceꢀvoltage  
VGS  
±20  
Powerꢀdissipationꢀ(TCꢀ=ꢀ25°C)  
Ptot  
227  
W
°C  
Tjꢀ,ꢀT stg  
Operatingꢀjunctionꢀandꢀstorageꢀtemperature  
ꢁ55...+150  
Notes:1.EASꢀwasꢀtestedꢀatꢀTjꢀ=ꢀ25,ꢀIDꢀ=ꢀ46A.  
©China Resources Microelectronics (Chongqing) Limited  
Page 1  

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