Datasheet > CRSG026N10NZ

CRSG026N10NZ

更新时间： 2024-11-19 17:01:31

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	1262K
描述
TO-263-6L

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中文翻译

获取价格

数据手册

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CRSG026N10NZ 数据手册

CRSG026N10NZ

SkyMOS1 N-MOSFET 100V, 2.2mΩ, 230A

华润微电子(重庆)有限公司

Features

Product Summary

V_DS

100V

• Uses CRM(CQ) advanced SkyMOS1 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_DS(on)

I_D

2.2mΩ

230A

100% DVDS Tested

Applications

100% Avalanche Tested

• Motor control and drive

• Battery management

• UPS (Uninterrupible Power Supplies)

CRSG026N10NZ

Package Marking and Ordering Information

Part #

Marking

Package

Reel Size

Tape Width

N/A

Qty

Packing

Tape

CRSG026N10NZ

TO-263-6L

N/A

800pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

100

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

234

240

148

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

936

529

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)^[1]

Gate-Source voltage

V_GS

±20

Power dissipation (T_C= 25°C)

P_tot

260

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Notes:1.EAS was tested at Tj = 25℃, ID = 46A.

Thermal Resistance

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

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CRSH1-2	CENTRAL	获取价格	SCHOTTKY BARRIER RECTIFIER 1.0 AMPS, 20 THRU 100 VOLTS
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CRSH1-2LEADFREE	CENTRAL	获取价格	暂无描述
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