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CRSH1-2TR-RPCU PDF预览

CRSH1-2TR-RPCU

更新时间: 2024-11-04 13:02:35
品牌 Logo 应用领域
CENTRAL 整流二极管
页数 文件大小 规格书
2页 125K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, DO-41SP, 2 PIN

CRSH1-2TR-RPCU 技术参数

生命周期:Active零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.31
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-PALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:20 V
表面贴装:NO技术:SCHOTTKY
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIALBase Number Matches:1

CRSH1-2TR-RPCU 数据手册

 浏览型号CRSH1-2TR-RPCU的Datasheet PDF文件第2页 
DATA SHEET  
CRSH1 SERIES  
SCHOTTKY BARRIER RECTIFIER  
1.0 AMPS, 20 THRU 100 VOLTS  
JEDEC DO-41 CASE  
DESCRIPTION  
The CENTRAL SEMICONDUCTOR CRSH1 Series types are Schottky Barrier Rectifiers mounted in an axial  
lead epoxy case using metal to silicon junction to yield low forward voltage drop and instantaneous reverse  
recovery times.  
MAXIMUM RATINGS (T =25°C unless otherwise noted)  
A
CRSH1 CRSH1 CRSH1 CRSH1 CRSH1 CRSH1 CRSH1  
SYMBOL  
-2  
-3  
-4  
-5  
-6  
-8  
-10  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
RMS Reverse Voltage  
V
V
V
20  
20  
14  
30  
30  
21  
40  
40  
28  
1.0  
30  
50  
50  
35  
60  
60  
42  
80  
80  
56  
100  
100  
70  
V
V
V
A
A
°C  
°C  
°C/W  
RRM  
R
R(RMS)  
Average Forward Current (T =75°C)  
I
I
T
T
L
O
FSM  
J
stg  
Peak Forward Surge Current (8.3ms)  
Junction Temperature  
-65 to +125  
-65 to +125  
80  
StorageTemperature  
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =Rated V  
MIN  
TYP  
MAX  
UNITS  
I
I
V
V
V
0.5  
10  
0.5  
0.7  
0.85  
mA  
mA  
V
V
V
R
R
F
F
F
R
RRM  
V =Rated V  
T =100°C  
I =1.0A (20V THRU 40V)  
R
RRM, A  
F
I =1.0A (50V AND 60V)  
F
I =1.0A (80V AND 100V)  
F
C
V =4.0V, f=1.0MHz  
110  
pF  
J
F
(SEE REVERSE SIDE)  
R1  

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