Datasheet > CRSG039N14N3

CRSG039N14N3

更新时间： 2024-11-05 17:01:19

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	994K
描述
TO-263-7(或D2PAK-7)

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中文翻译

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数据手册

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CRSG039N14N3 数据手册

CRSG039N14N3

华润微电子(重庆)有限公司

SkyMOS3 N-MOSFET 135V, 3.1mΩ, 180A

Features

Product Summary

V_DS

135V

• Uses CRM(CQ) advanced SkyMOS3 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_DS(on).typ

I_D

3.1mΩ

180A

100% DVDS Tested

100% Avalanche Tested

Applications

• Motor control and drive

• Battery management System

• UPS (Uninterrupible Power Supplies)

CRSG039N14N3

Package Marking and Ordering Information

Part #

Marking

Package

Packing

Tape

Reel Size Tape Width

Qty

CRSG039N14N3 CRSG039N14N3 TO-263-7 pin

N/A

800pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

135

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

180

240

I_D

114

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (ID = 76A, Rg=25Ω)^[1]

)

I_{D pulse}

E_AS

720

1434

±20

V_GS

Gate-Source voltage

Power dissipation (T_C= 25°C)

P_tot

262

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

Tsold

245

°C

※. Notes:

1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS =76A, VGS = 10V.

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

Page 1

12 3 4 5 6 7...9

中文翻译

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