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CRSH16D-100FP PDF预览

CRSH16D-100FP

更新时间: 2024-11-18 03:26:51
品牌 Logo 应用领域
CENTRAL 整流二极管瞄准线功效局域网
页数 文件大小 规格书
2页 156K
描述
SILICON SCHOTTKY RECTIFIERS DUAL, COMMON CATHODE 16 AMP, 40 THRU 100 VOLTS

CRSH16D-100FP 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220FP, FULL PACK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.47
其他特性:LOW POWER LOSS, HIGH RELIABILITY应用:EFFICIENCY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.75 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:16 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CRSH16D-100FP 数据手册

 浏览型号CRSH16D-100FP的Datasheet PDF文件第2页 
TM  
CRSH16D-40FP  
CRSH16D-60FP  
CRSH16D-100FP  
Central  
Semiconductor Corp.  
SILICON SCHOTTKY RECTIFIERS  
DUAL, COMMON CATHODE  
16 AMP, 40 THRU 100 VOLTS  
FEATURES:  
• HIGH RELIABILITY  
• HIGH CURRENT CAPABILITY  
• UL FLAMMABILITY CLASSIFICATION 94V-O  
• LOW POWER LOSS, HIGH EFFICIENCY  
• LOW FORWARD VOLTAGE  
• HIGH SURGE CAPACITY  
SUPERIOR LOT TO LOT CONSISTENCY  
HIGH VOLTAGE  
MARKING CODE: FULL PART NUMBER  
TO-220FP CASE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CRSH16D-40FP Series types are Silicon Schottky Rectifiers  
designed for fast switching applications requiring a low forward voltage drop.  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CRSH16D  
CRSH16D  
-60FP  
60  
CRSH16D  
-100FP  
100  
-40FP  
40  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
V
V
RRM  
V
40  
60  
100  
R
RMS Reverse Voltage  
V
26  
42  
80  
V
R(RMS)  
Average Forward Current (T =90°C)  
C
I
16  
A
O
Peak Forward Surge Current (8.3ms)  
Critical Rate of Rise of Reverse Voltage  
Operating and Storage  
I
150  
A
FSM  
dv/dt  
10,000  
V/μs  
Junction Temperature  
T ,T  
-65 to +150  
°C  
J
stg  
Typical Thermal Resistance  
Typical Thermal Resistance  
Θ
Θ
4.0  
60  
°C/W  
°C/W  
JC  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
C
CRSH16D  
-40FP  
CRSH16D  
-60FP  
CRSH16D  
-100FP  
SYMBOL  
TEST CONDITIONS  
TYP MAX  
TYP MAX  
TYP MAX  
UNITS  
I
V =Rated V  
200  
15  
200  
15  
200  
15  
µA  
mA  
V
R
R
RRM  
RRM  
I
V =Rated V  
, T = 125°C  
C
R
R
V
I =8.0A  
F
0.65  
0.75  
0.85  
0.75  
1.10  
1.00  
300  
F
V
F
V
I =8.0A, T = 125°C  
0.57  
0.65  
V
F
C
I =16A  
0.84  
0.95  
V
F
F
V
F
C
I =16A, T = 125°C  
0.72  
0.85  
V
F
C
V =4.0V, f=1.0MHz  
300  
300  
pF  
J
R
R1 (25-January 2006)  

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