Datasheet > CRSG022N10N4Z

CRSG022N10N4Z

更新时间： 2024-11-19 17:01:35

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	478K
描述
TO-263-6L

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中文翻译

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数据手册

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CRSG022N10N4Z 数据手册

CRSG022N10N4Z

华润微电子(重庆)有限公司

SkyMOS4ꢀNꢁMOSFETꢀ100V,ꢀ1.8mꢂ,ꢀ240A

Features

Product Summary

V_DS

100V

•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS4ꢀtechnology

•ꢀExtremelyꢀlowꢀonꢁresistanceꢀR_DS(on)

•ꢀExcellentꢀQ_gxR_DS(on)ꢀproduct(FOM)

•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria

R_DS(on)

I_Dꢀ

1.8mꢂ

240A

Applications

100% DVDS Tested

•ꢀMotorꢀcontrolꢀandꢀdrive

•ꢀBatteryꢀmanagement

•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)

100% Avalanche Tested

CRSG022N10N4Z

Package Marking and Ordering Information

Partꢀ#

Marking

Package

ReelꢀSize

TapeꢀWidth

N/A

Qty

Packing

CRSG022N10N4Z SG022N10N4Z

TOꢁ263ꢁ6L

Tape&Reel

N/A

ꢁ

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drainꢁsourceꢀvoltage

100

Continuousꢀdrainꢀcurrent

T_Cꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)

T_Cꢀ=ꢀ25°Cꢀ(Packageꢀlimit)

T_Cꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)

281ꢀ

240

I_D

198ꢀ

Pulsedꢀdrainꢀcurrentꢀ(T_Cꢀ=ꢀ25°C,ꢀt_pꢀlimitedꢀbyꢀT_jmax

)

I_Dꢀpulse

E_AS

960ꢀ

500ꢀ

Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25Ω)^[1]

GateꢁSourceꢀvoltage

V_GS

±20

Powerꢀdissipationꢀ(T_Cꢀ=ꢀ25°C)

P_tot

300ꢀ

°C

T_jꢀ,ꢀT _stg

Operatingꢀjunctionꢀandꢀstorageꢀtemperature

ꢁ55...+175

Notes:1.EASꢀwasꢀtestedꢀatꢀTjꢀ=ꢀ25℃,ꢀIDꢀ=ꢀ45A.

Rev1.0

©China Resources Microelectronics (Chongqing) Limited

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中文翻译

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CRSH1-2LEADFREE	CENTRAL	获取价格	暂无描述
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