Datasheet > CRSG022N10N4Q

CRSG022N10N4Q

更新时间： 2024-11-05 17:01:07

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1374K
描述
TO-263-6L

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中文翻译

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数据手册

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CRSG022N10N4Q 数据手册

CRSG022N10N4Q

华润微电子(重庆)有限公司

SkyMOS4 N-MOSFET 100V, 1.6mΩ, 250A

Features

Product Summary

V_DS

100V

• Uses CRM(CQ) advanced SkyMOS4 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• AEC-Q101 Qualified

R_DS(on).typ

I_D

1.6mΩ

250A

• MSL1 up to 260°C peak reflow

100% DVDS Tested

100% Avalanche Tested

Applications

• DCDC Converter

• Switching applications

CRSG022N10N4Q

Package Marking and Ordering Information

Part #

Marking

Package

Packing

Tape

Reel Size Tape Width

Qty

CRSG022N10N4Q

TO-263-6L

N/A

800pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

100

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

270

250

I_D

194

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (ID = 66A, Rg=25Ω)^[1]

)

I_{D pulse}

E_AS

1000

1089

±20

V_GS

Gate-Source voltage

Power dissipation (T_C= 25°C)

P_tot

321

°C

T_j, T _stg

Operating junction and storage temperature

-55...+175

Soldering temperature, wave soldering only allowed at leads (1.6mm

from case for 10s)

Tsold

260

°C

※. Notes:

EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS =66A, VGS = 10V.

Rev2.0

©China Resources Microelectronics (Chongqing) Limited

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