生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G5 |
针数: | 5 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
配置: | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 1 A | 最大漏极电流 (ID): | 1.4 A |
最大漏源导通电阻: | 0.26 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G5 | 元件数量: | 2 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大功率耗散 (Abs): | 0.9 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CPH5606 | SANYO |
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CPH5606 |
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CPH5608 | SANYO |
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Ultrahigh-Speed Switching Applications |
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CPH5611 | SANYO |
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N CHANNEL SILICON TRANSISTOR |
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CPH5612 | SANYO |
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N-Channel Silicon MOSFET General-Purpose Switching Device |
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CPH5614 | SANYO |
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N-Channel Silicon MOSFET General-Purpose Switching Device |
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CPH5616 | SANYO |
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N-Channel Silicon MOSFET General-Purpose Switching Device |
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CPH5617 | SANYO |
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General-Purpose Switching Device Applications |
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CPH5617-TL-E | SANYO |
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General-Purpose Switching Device Applications |
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CPH5617-TL-E | ONSEMI |
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N-Channel Small Signal MOSFET, 30V, 150mA, 3. |
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CPH5701 | SANYO |
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DC/DC Converter Applications |
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