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CPD83V-CMPD914-WN PDF预览

CPD83V-CMPD914-WN

更新时间: 2024-11-23 15:29:51
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 421K
描述
Rectifier Diode,

CPD83V-CMPD914-WN 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
Base Number Matches:1

CPD83V-CMPD914-WN 数据手册

 浏览型号CPD83V-CMPD914-WN的Datasheet PDF文件第2页 
PROCESS CPD83V  
Switching Diode  
High Speed Switching Diode Chip  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
11 x 11 MILS  
Die Size  
Die Thickness  
7.1 MILS  
Anode Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
3.35 x 3.35 MILS  
Al - 30,000Å  
Au-As - 13,000Å  
GEOMETRY  
GROSS DIE PER 5 INCH WAFER  
137,880  
PRINCIPAL DEVICE TYPES  
CMPD914  
CMPD4448  
1N914  
1N914B  
1N4148  
1N4448  
1N4154  
1N4454  
BACKSIDE CATHODE  
R0  
CMPD2836  
CMPD2838  
CMPD7000  
R5 (22-March 2010)  
www.centralsemi.com  

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