Datasheet > CPD91V-CMPD6001

CPD91V-CMPD6001

更新时间： 2024-10-01 14:52:27

品牌	Logo	应用领域
CENTRAL		二极管
页数	文件大小	规格书
4页	705K
描述
100V Bare die,11.030 X 11.030 mils,Diode-Ultra Low Leakage

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技术参数
数据手册

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CPD91V-CMPD6001 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
二极管类型：	RECTIFIER DIODE	Base Number Matches：	1

CPD91V-CMPD6001 数据手册

CPD91V-CMPD6001

Switching Diode Die

250mA, 75 Volt

www.centralsemi.com

The CPD91V-CMPD6001 is a silicon epitaxial planar diode designed for switching applications

requiring extremely low leakage.

MECHANICAL SPECIFICATIONS:

Die Size

11 x 11 MILS

7.1 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

3.35 x 3.35 MILS

Al - 15,000Å

Au-As - 9,000Å

2.36 MILS

ANODE

5 INCHES

Gross Die Per Wafer

137,880

BACKSIDE CATHODE

MAXIMUM RATINGS: (T =25°C)

Continuous Reverse Voltage

SYMBOL

UNITS

100

Peak Repetitive Reverse Voltage

Continuous Forward Current

RRM

250

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Operating and Storage Junction Temperature

250

FRM

4.0

FSM

1.0

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =75V

MIN

MAX

500

UNITS

I =100μA

100

I =1.0mA

0.85

0.95

1.1

I =10mA

I =100mA

V =0, f=1.0MHz

2.0

μs

I =I =10mA, I =1.0mA, R =100Ω

3.0

R2 (30-August 2017)

12 3 4

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