Datasheet > CPD89V-CMPD5001

CPD89V-CMPD5001

更新时间： 2023-12-06 20:01:27

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
4页	501K
描述
400mA,120V Bare die,12.800 X 12.800 mils,Diode-Switching

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CPD89V-CMPD5001 数据手册

CPD89V-CMPD5001

Schottky Diode Die

www.centralsemi.com

0.4 Amp, 120 Volt

The CPD89V-CMPD5001 is a silicon switching diode designed for applications requiring high

current capability.

MECHANICAL SPECIFICATIONS:

Die Size

12.8 x 12.8 MILS

7.1 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

5.1 x 5.1 MILS

Al – 30,000Å

Au-As – 10,000Å

2.36 MILS

5 INCHES

Gross Die Per Wafer

103,344

MAXIMUM RATINGS: (T =25°C)

Continuous Reverse Voltage

SYMBOL

UNITS

120

400

Continuous Forward Current

Peak Repetitive Forward Current

Peak Repetitive Reverse Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Operating and Storage Junction Temperature

800

FRM

600

RRM

6.0

FSM

1.5

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =90V

MIN

MAX

100

UNITS

I =50μA

120

325

0.75

0.84

0.90

1.00

1.25

I =10mA

I =50mA

I =100mA

I =200mA

I =400mA

V =0, f=1.0MHz

I =I =30mA, I =3.0mA, R =100Ω

I =I =10mA, I =3.0mA, R =100Ω

R0 (23-January 2017)

12 3 4

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