Datasheet > CPD89V-CMPD1001-CM

CPD89V-CMPD1001-CM

更新时间： 2024-09-30 07:24:27

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CPD89V-CMPD1001-CM 技术参数

PROCESS CPD89V

Switching Diode

High Current Diode Chip

PROCESS DETAILS

Process

EPITAXIAL PLANAR

12.8 x 12.8 MILS

7.1 MILS

Die Size

Die Thickness

Anode Bonding Pad Area

Top Side Metalization

Back Side Metalization

5.1 x 5.1 MILS

Al - 30,000Å

Au-As - 10,000Å

GEOMETRY

GROSS DIE PER 5 INCH WAFER

103,344

PRINCIPAL DEVICE TYPES

CMPD1001 SERIES

CMPD5001 SERIES

R1 (22-March 2010)

www.centralsemi.com

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型号	品牌	获取价格	描述	数据表
CPD89V-CMPD1001-CT	CENTRAL	获取价格	Rectifier Diode,
CPD89V-CMPD1001S-WN	CENTRAL	获取价格	Rectifier Diode,
CPD89V-CMPD1001S-WS	CENTRAL	获取价格	Rectifier Diode,
CPD89V-CMPD1001-WS	CENTRAL	获取价格	Rectifier Diode,
CPD89V-CMPD5001	CENTRAL	获取价格	400mA,120V Bare die,12.800 X 12.800 mils,Diode-Switching
CPD89V-CMPD5001S-WS	CENTRAL	获取价格	Rectifier Diode,
CPD91	CENTRAL	获取价格	Switching Diode Low Leakage Switching Diode Chip
CPD91V	CENTRAL	获取价格	Switching Diode Low Leakage Switching Diode Chip
CPD91V_10	CENTRAL	获取价格	Switching Diode Low Leakage Switching Diode Chip
CPD91V-CD6001	CENTRAL	获取价格	Bare die,11.030 X 11.030 mils,Low Leakage Switching Diode