Datasheet > CPD87R-CFSH2-4L

CPD87R-CFSH2-4L

更新时间： 2024-09-30 14:55:59

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CENTRAL		/
页数	文件大小	规格书
4页	521K
描述
200mA,40V Bare die,14.567 X 14.567 mils,Diode-Schottky (<1A)

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CPD87R-CFSH2-4L 数据手册

CPD87R-CFSH2-4L

Schottky Diode Die

0.2 Amp, 40 Volt

www.centralsemi.com

The CPD87R-CFSH2-4L is a silicon Schottky diode designed for applications where operational

eﬃciency is a prime requirement.

MECHANICAL SPECIFICATIONS:

Die Size

14.6 x 14.6 MILS

3.9 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

11.8 x 11.8 MILS

Al – 30,000Å

Au – 9,000Å

1.57 MILS

5 INCHES

Gross Die Per Wafer

80,698

MAXIMUM RATINGS: (T =25°C)

Peak Repetitive Reverse Voltage

Average Forward Current

SYMBOL

UNITS

0.2

RRM

Peak Forward Surge Current, tp=8.3ms

Operating and Storage Junction Temperature

1.0

FSM

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =10V

MIN

TYP

MAX

1.0

UNITS

μA

V =40V

2.0

μA

I =10μA

I =10mA

0.45

0.52

0.60

I =100mA

I =200mA

V =4.0V, f=1.0MHz

I =I =10mA, I =1.0mA, R =100Ω

5.0

R0 (23-January 2017)

12 3 4

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