Datasheet > CPC3714C

CPC3714C

更新时间： 2024-11-21 06:48:27

品牌	Logo	应用领域
CLARE		晶体晶体管开关
页数	文件大小	规格书
4页	394K
描述
N-Channel Depletion-Mode Vertical DMOS FETs

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CPC3714C 数据手册

CPC3714C

N-Channel Depletion-Mode

Vertical DMOS FETs

Description

BV_DSX

BV_DGX

350V

R_DS(ON)

(max)

14Ω

I_DSS(min)

Package

The CPC3714C is an N-channel depletion mode field

effect transistor (FET) that utilizes Clare’s proprietary

third generation vertical DMOS process. Third

generation process realizes world class, high voltage

MOSFET performance in an economical silicon gate

process. Our vertical DMOS process yields a robust

device for high power applications with high input

impedance. The CPC3714C is a highly reliable FET

device that has been used extensively in Clare’s solid

state relays for industrial and telecommunications

applications.

240mA

SOT-89

Features

• Depletion mode device offers low R_DS(ON)at cold

temperatures

• Low on resistance 14 ohms max. at 25ºC

• High input impedance

• High breakdown voltage 350V

• Low V_GS(off)voltage -1.6 to -3.9V

• Small package size SOT-89

This device excels in power applications requiring

low drain-source resistance, particularly in cold

environments such as automotive ignition modules.

The CPC3714C offers a low 14 ohm maximum on-

state resistance at 25ºC.

Applications

• Ignition modules

• Normally-on switches

• Solid state relays

• Converters

The CPC3714C has a minimum breakdown voltage of

350V and is available in an SOT-89 package. As with

all MOS devices, the FET structure prevents thermal

runaway and thermal-induced secondary breakdown.

• Telecommunications

• Power supply

Ordering Information

Part #

CPC3714C

CPC3714CTR

Description

SOT-89 (100/Tube)

SOT-89 (2000/Reel)

Package Pinout

(SOT-89)

Switching Waveform

Test Circuit

V_DD

R_L

90%

PULSE

GENERATOR

INPUT

OUTPUT

10%

-10V

R_gen

t_(ON)

t_d(ON)

t_(OFF)

t_d(OFF)

t_r

t_F

D.U.T.

V_DD

INPUT

10%

OUTPUT

90%

DS-CPC3714C-R00A.5

www.clare.com

12 3 4

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