Datasheet > CPC3730

CPC3730

更新时间： 2024-11-19 14:56:19

品牌	Logo	应用领域
力特 - LITTELFUSE		栅高压晶体管场效应晶体管栅极
页数	文件大小	规格书
6页	158K
描述
我们的N沟道耗尽型场效应晶体管（FET）采用专有的第三代垂直DMOS工艺。第三代工艺在经济的硅栅极工艺中实现了世界级的高压MOSFET性能。垂直DMOS工艺为具有高输入阻抗的高功率应用提供了一

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CPC3730 数据手册

CPC3730

350V N-Channel

Depletion-Mode FET

INTEGRATED

CIRCUITS

DIVISION

Description

V_(BR)DSX

V_(BR)DGX

R_DS(on)

(max)

I_DSS(min)

Package

The CPC3730 is an N-channel, depletion mode, field

effect transistor (FET) that utilizes IXYS Integrated

Circuits Division’s proprietary third-generation vertical

DMOS process. The third-generation process realizes

world class, high voltage MOSFET performance

in an economical silicon gate process. Our vertical

DMOS process yields a robust device, with high input

impedance, for use in high power applications. The

CPC3730 is a highly reliable FET device that has

been used extensively in our solid state relays for

industrial and telecommunications applications.

350V_P

35

140mA

SOT-89

Features

• Low R_DS(on)at Cold Temperatures

• R_DS(on)35 max. at 25ºC

• High Input Impedance

• High Breakdown Voltage: 350V_P

• Low V_GS(off)Voltage: -1.6 to -3.9V

• Small Package Size: SOT-89

This device excels in power applications requiring

low drain-source resistance, particularly in cold

environments such as automotive ignition modules.

The CPC3730 offers a low, 35 maximum, on-state

resistance at 25ºC.

Applications

• Ignition Modules

• Normally-On Switches

• Solid State Relays

• Converters

The CPC3730 has a minimum breakdown voltage

of 350V_P, and is available in an SOT-89 package.

As with all MOS devices, the FET structure prevents

thermal runaway and thermal-induced secondary

breakdown.

• Telecommunications

• Power Supply

Ordering Information

Part #

CPC3730CTR

Description

N-Channel Depletion Mode FET, SOT-89 Pkg.

Tape and Reel (1000/Reel)

Package Pinout

Circuit Symbol

(SOT-89)

DS-CPC3730-R01

www.ixysic.com

12 3 4 5 6

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