CNB1009R

更新时间： 2024-11-24 12:58:23

品牌	Logo	应用领域
松下 - PANASONIC		光电传感器
页数	文件大小	规格书
2页	52K
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中文翻译

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数据手册

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CNB1009R 数据手册

Reflective Photosensors (Photo Reflectors)

CNB1009

Reflective Photosensor

Overview

Unit : mm

CNB1009 is a photosensor detecting the change of reflective light

in which a high efficiency GaAs infrared light emitting diode is used

as the light emitting element, and a high sensitivity Si phototransistor

is used as the light detecting element. The two elements are located

parallel in the same direction and objects are detected when passing

in front of the device.

12.0±0.3

2-ø2.3

1.0

(4.0)

(1.0)

1.0

19.0±0.3

2-9.5±0.2

ø2.2

Features

Fast response : t_r, t_f= 6 µs (typ.)

Small size, light weight

(15.5)

Applications

Detection of paper, film and cloth

Optical mark reading

Detection of coin and bill

Detection of position and edge

Start, end mark detection of magnetic tape

Pin connection

(Note) ( ) Dimension is reference

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol Ratings Unit

Reverse voltage (DC)

Forward current (DC)

Power dissipation

V_R

I_F

Input (Light

emitting diode)

P_D

Collector to emitter voltage V_CEO

Emitter to collector voltage V_ECO

Output (Photo

transistor)

Collector current

I_C

100

˚C

Input power derating ratio is

Collector power dissipation P_C

1.0 mW/˚C at Ta ≥ 25˚C.

^*2Output power derating ratio is

Operating ambient temperature

Storage temperature

T_opr–25 to +85

Temperature

T_stg–30 to +100 ˚C

1.34 mW/˚C at Ta ≥ 25˚C.

Electrical Characteristics (Ta = 25˚C)

Parameter

Symbol

V_F

Conditions

min

typ

max

1.5

Unit

Forward voltage (DC)

Reverse current (DC)

Capacitance between pins

I_F= 50mA

V_R= 3V

1.2

Input

I_R

µA

µs

characteristics

C_t

V_R= 0V, f = 1MHz

Output characteristics Collector cutoff current

I_CEOV_CE= 10V

C_CV_CE= 10V, f= 1MHz

V_CC= 10V, I_F= 20mA, R_L= 100Ω

t_r^*2, t_f^*3V_CC= 10V, I_C= 1mA, R_L= 100Ω

0.2

Collector to emitter capacitance

500

Collector current

Response time

I_C

100

Transfer

characteristics

Collector to emitter saturation voltage V_CE(sat)I_F= 50mA, I_C= 0.1mA

0.3

Transfer characteristics measurement circuit

(Ambient light is shut off completely)

Time required for the collector current to increase from

10% to 90% of its final value.

V_CC

I_C

Time required for the collector

I_F

90%

10%

current to decrease from 90%

to 10% of its initial value.

d = 5 mm

t_r

t_f

R_L

Standard white paper (Reflective ratio 90%)

中文翻译

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与CNB1009R相关器件

型号	品牌	获取价格	描述	数据表
CNB1011	PANASONIC	获取价格	Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.04-0.243mA, 1-Channel, Square, Through H
CNB1011_06	PANASONIC	获取价格	Reflective photosensor
CNB1011P	PANASONIC	获取价格	Reflective photosensor
CNB1301	PANASONIC	获取价格	Reflective Photosensor
CNB1301(ON2171)	ETC	获取价格	光デバイス－フォトカプラ?フォトセンサ－反射形フォトセンサ
CNB1302	PANASONIC	获取价格	Reflective Photosensor
CNB1302(ON2170)	ETC	获取价格	光デバイス－フォトカプラ?フォトセンサ－反射形フォトセンサ
CNB1302Q	PANASONIC	获取价格	Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.09-0.22mA, 1-Channel, Rectangular, Throu
CNB1302R	PANASONIC	获取价格	Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.18-0.44mA, 1-Channel, Rectangular, Throu
CNB1302S	PANASONIC	获取价格	Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.36-0.88mA, 1-Channel, Rectangular, Throu

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