Datasheet > CNB1011_06

CNB1011_06

更新时间： 2024-09-18 01:24:07

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	58K
描述
Reflective photosensor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CNB1011_06 数据手册

Reflective Photosensors (Photo Reflectors)

CNB1011

Reflective photosensor

Unit: mm

C0.3

I Features

• Ultraminiature, thin type: 2.29 mm × 2.9 mm (height: 0.88 mm)

I Applications

0.577

0.748

• Non-contact point SW, object sensing

1.325

0.75 max.

1.7

0.75 max.

1.7

1.285

2.29 0 1

5.69 0 3

2.9 ^{0 1}

I Absolute Maximum Ratings T_a= 25°C

4-0.5

1.45

Parameter

Symbol Rating

Unit

Input (Light Reverse voltage (DC)

V_R

I_F

emitting diode) Forward current (DC)

1: Anode

Power dissipation ^*

P_D

I_C

2: Cathode

3: Emitter

4: Collector

Output (Photo Collector current

0.7

1.4

transistor)

Collector to emitter voltage V_CEO

(Note) Tolerance unless otherwise specified is 0.2

Emitter to collector voltage V_ECO

Collector power dissipation ^*

P_C

°C

Temperature Operating ambient temperature T_opr

Storage temperature

Note) 1: Input power derating ratio is 1.0 mW/°C at T ≥ 25°C.

−25 to +85

T_stg−40 to +100

°C

2: Output power derating ratio is 1.0 mW/°C at T ≥ 25°C.

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_F

Conditions

Min

Typ

Max

1.3

Unit

Input

Forward voltage (DC)

I_F= 4 mA

V_R= 3 V

1.15

characteristics Reverse current (DC)

I_R

µA

Output

Collector cutoff current

I_CEO

V_CE= 20 V

100

characteristics

Transfer Collector current ^*

I_C

I_D

V_CE= 2 V, I_F= 4 mA, d = 1 mm

V_CE= 2 V, I_F= 4 mA

243

100

0.4

µA

characteristics Leakage current

Collector to emitter saturation voltage V_CE(sat)I_F= 20 mA, I_C= 0.1 mA

Response time ^*

t_r

t_f

V_CC= 2 V, I_C= 0.1 mA

R_L= 1000 Ω

µs

Note) 1:Output current (I ) measurement

2: Response time measurement

method (see figure below)

circuit (see figure below)

Glass plate

evaporated Al

d = 1 mm

Glass plate

evaporated Al

d = 1 mm

t_r: Rise time

t_f: Fall time

Sig. in

R_L

I_F

I_C

V_CC

Sig.

out

Sig. out

Sig. in

50 Ω

90%

10%

V_CC

R_L

t_r

t_f

Input and output are handled electrically

This product is not designed to withstand radiation

Publication date: October 2001

SHG00056AED

12 3

中文翻译

下载PDF

与CNB1011_06相关器件

型号	品牌	获取价格	描述	数据表
CNB1011P	PANASONIC	获取价格	Reflective photosensor
CNB1301	PANASONIC	获取价格	Reflective Photosensor
CNB1301(ON2171)	ETC	获取价格	光デバイス－フォトカプラ?フォトセンサ－反射形フォトセンサ
CNB1302	PANASONIC	获取价格	Reflective Photosensor
CNB1302(ON2170)	ETC	获取价格	光デバイス－フォトカプラ?フォトセンサ－反射形フォトセンサ
CNB1302Q	PANASONIC	获取价格	Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.09-0.22mA, 1-Channel, Rectangular, Throu
CNB1302R	PANASONIC	获取价格	Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.18-0.44mA, 1-Channel, Rectangular, Throu
CNB1302S	PANASONIC	获取价格	Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.36-0.88mA, 1-Channel, Rectangular, Throu
CNB1303	PANASONIC	获取价格	Reflective Photosensor
CNB1303(ON2180)	ETC	获取价格	CNB1303 (ON2180) - Reflective Photosensor