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CNB1303 PDF预览

CNB1303

更新时间: 2024-09-17 22:28:43
品牌 Logo 应用领域
松下 - PANASONIC 光电传感器换能器线性位置传感器
页数 文件大小 规格书
2页 51K
描述
Reflective Photosensor

CNB1303 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
其他特性:HIGH SENSITIVITY, 0.40V VCE主体宽度:2.7 mm
主体高度:1.5 mm主体长度或直径:3.4 mm
最大测量范围(毫米):1 mm最小测量范围(毫米):1 mm
安装特点:THROUGH HOLE MOUNT最大工作电流:50 mA
最高工作温度:85 °C最低工作温度:-25 °C
输出范围:0.09-0.88mA输出类型:ANALOG CURRENT
封装形状/形式:RECTANGULAR响应时间:20 µs
传感器/换能器类型:LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE最大供电电压:1.5 V
最小供电电压:1.3 V表面贴装:NO
端接类型:SOLDERBase Number Matches:1

CNB1303 数据手册

 浏览型号CNB1303的Datasheet PDF文件第2页 
Reflective Photosensors (Photo Reflectors)  
CNB1303  
Reflective Photosensor  
Unit : mm  
Overview  
Mark for indicating  
emitter side  
C0.5  
CNB1303 is a small, thin reflective photosensor consisting of a  
high efficiency GaAs infrared light emitting diode which is integrated  
with a high sensitivity Si phototransistor in a single resin package.  
1
3
Chip  
center  
Features  
Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm)  
Visible light cutoff resin is used  
Fast response : tr, tf = 20µs (typ.)  
Easy interface for control circuit  
4-0.7  
4-0.5  
±0.1  
0.5  
2
4
1.8  
0.15  
Applications  
3.4±0.3  
Control of motor and other rotary units  
Detection of position and edge  
Detection of paper, film and cloth  
Start, end mark detection of magnetic tape  
3
4
1
2
Pin connection  
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Symbol Ratings Unit  
Reverse voltage (DC)  
Forward current (DC)  
Power dissipation  
Collector current  
VR  
3
V
mA  
mW  
mA  
V
Input (Light  
IF  
50  
75  
20  
30  
5
emitting diode)  
*1  
PD  
IC  
Collector to emitter voltage VCEO  
Output (Photo  
transistor)  
Emitter to collector voltage VECO  
V
*1 Input power derating ratio is  
*2  
Collector power dissipation PC  
50  
mW  
˚C  
1.0 mW/˚C at Ta 25˚C.  
*2 Output power derating ratio is  
Operating ambient temperature  
Topr –25 to +85  
Temperature  
0.67 mW/˚C at Ta 25˚C.  
Storage temperature  
Tstg –30 to +100 ˚C  
Electrical Characteristics (Ta = 25˚C)  
Parameter  
Symbol  
VF  
Conditions  
min  
typ  
1.3  
max  
1.5  
Unit  
V
Forward voltage (DC)  
Reverse current (DC)  
Capacitance between terminals  
IF = 50mA  
VR = 3V  
Input  
IR  
0.01  
30  
10  
µA  
pF  
characteristics  
Ct  
VR = 0V, f = 1MHz  
Output characteristics Collector cutoff current  
ICEO VCE = 10V  
200  
880  
200  
nA  
µA  
nA  
µs  
*1, *2  
Collector current  
IC  
VCC = 5V, IF = 10mA, RL = 100, d = 1mm  
90  
Leakage current  
Response time  
ID  
VCC = 5V, IF = 10mA, RL = 100Ω  
Transfer  
tr*3 , tf*4 VCC = 5V, IC = 0.1mA, RL = 100Ω  
20  
characteristics  
Collector to emitter saturation voltage VCE(sat) IF = 20mA, IC = 0.1mA  
0.4  
V
*1 IC classifications  
Class  
*2 Output current measurement method  
Evaporated Al  
Q
R
S
Glass plate  
(t = 1mm)  
IC (µA)  
90 to 220  
180 to 440  
360 to 880  
*3 Time required for the output current to increase from 10% to 90% of its final value  
*4 Time required for the output current to decrease from 90% to 10% of its initial value  
RL  
IC  
IF  
VCC  
1

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