Datasheet > CNB1303(ON2180)

CNB1303(ON2180)

更新时间： 2024-09-17 23:42:55

品牌	Logo	应用领域
其他 - ETC		光电传感器
页数	文件大小	规格书
3页	63K
描述
CNB1303 (ON2180) - Reflective Photosensor

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CNB1303(ON2180) 数据手册

Reflective Photosensors (Photo Reflectors)

CNB1303 (ON2180)

Reflective Photosensor

Unit : mm

Overview

Mark for indicating

emitter side

C0.5

CNB1303 is a small, thin reflective photosensor consisting of a

high efficiency GaAs infrared light emitting diode which is integrated

with a high sensitivity Si phototransistor in a single resin package.

Chip

center

Features

Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm)

Visible light cutoff resin is used

Fast response : t_r, t_f= 20µs (typ.)

Easy interface for control circuit

4-0.7

4-0.5

±0.1

0.5

1.8

0.15

Applications

Control of motor and other rotary units

3.4±0.3

Detection of position and edge

Detection of paper, film and cloth

Start, end mark detection of magnetic tape

Pin connection

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol Ratings Unit

Reverse voltage (DC)

Forward current (DC)

Power dissipation

Collector current

V_R

I_F

Input (Light

emitting diode)

P_D

I_C

Collector to emitter voltage V_CEO

Output (Photo

transistor)

Emitter to collector voltage V_ECO

^*1Input power derating ratio is

Collector power dissipation P_C

˚C

1.0 mW/˚C at Ta ≥ 25˚C.

^*2Output power derating ratio is

Operating ambient temperature

T_opr–25 to +85

Temperature

0.67 mW/˚C at Ta ≥ 25˚C.

Storage temperature

T_stg–30 to +100 ˚C

Electrical Characteristics (Ta = 25˚C)

Parameter

Symbol

V_F

Conditions

min

typ

1.3

max

1.5

Unit

Forward voltage (DC)

Reverse current (DC)

Capacitance between terminals

I_F= 50mA

V_R= 3V

Input

I_R

0.01

µA

characteristics

C_t

V_R= 0V, f = 1MHz

Output characteristics Collector cutoff current

I_CEOV_CE= 10V

200

880

200

µA

µs

*1, *2

Collector current

I_C

V_CC= 5V, I_F= 10mA, R_L= 100Ω, d = 1mm

Leakage current

Response time

I_D

V_CC= 5V, I_F= 10mA, R_L= 100Ω

Transfer

t_r^*3, t_f^*4V_CC= 5V, I_C= 0.1mA, R_L= 100Ω

characteristics

Collector to emitter saturation voltage V_CE(sat)I_F= 20mA, I_C= 0.1mA

0.4

^*1I_Cclassifications

Class

^*2Output current measurement method

Evaporated Al

Glass plate

(t = 1mm)

I_C(µA)

90 to 220

180 to 440

360 to 880

^*3Time required for the output current to increase from 10% to 90% of its final value

^*4Time required for the output current to decrease from 90% to 10% of its initial value

R_L

I_C

I_F

V_CC

Note) The part number in the parenthesis shows conventional part number.

12 3

中文翻译

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与CNB1303(ON2180)相关器件

型号	品牌	获取价格	描述	数据表
CNB1303R	PANASONIC	获取价格	Diffuse Photoelectric Sensor, 1mm Min, 1mm Max, 0.18-0.44mA, 1-Channel, Rectangular, Throu
CNB1303S	PANASONIC	获取价格	暂无描述
CNB1304H	PANASONIC	获取价格	Reflective photosensor Tape end sensor for DAT
CNB1304H(ON2175)	ETC	获取价格	Opto-Electronic Device - Photocouplers·Photos
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CNB1J10KTTE	KOA	获取价格	Chip Networks Resistors
CNB1J10VTTD	KOA	获取价格	Chip Networks Resistors
CNB1J10VTTE	KOA	获取价格	Chip Networks Resistors
CNB1J10YTTD	KOA	获取价格	Chip Networks Resistors
CNB1J10YTTE	KOA	获取价格	Chip Networks Resistors

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