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CMXSH2-4LSTR13 PDF预览

CMXSH2-4LSTR13

更新时间: 2024-11-06 14:50:35
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
2页 73K
描述
Rectifier Diode, Schottky, 0.2A, 40V V(RRM),

CMXSH2-4LSTR13 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.76二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.325 V最大非重复峰值正向电流:1 A
最高工作温度:150 °C最大输出电流:0.2 A
最大重复峰值反向电压:40 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKYBase Number Matches:1

CMXSH2-4LSTR13 数据手册

 浏览型号CMXSH2-4LSTR13的Datasheet PDF文件第2页 
TM  
CMXSH2-4LS  
Central  
SUPERminiTM  
DUAL PAIR, IN-SERIES  
SURFACE MOUNT  
Semiconductor Corp.  
LOW V SCHOTTKY DIODES  
F
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMXSH2-4LS  
consists of Dual, In-Series pairs of Low V Schottky  
F
Diodes, manufactured in a SUPERmini™ SOT-26  
surface mount package. This device can be  
configured as a bridge rectifier using the optional  
mounting pad configuration on the following page.  
MARKING CODE: CXS4L  
SOT-26 CASE  
MAXIMUM RATINGS (T =25°C unless otherwise noted)  
A
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
V
I
40  
200  
V
mA  
RRM  
F
Peak Repetitive Forward Current  
Forward Surge Current, tp=10ms  
I
I
350  
1.0  
mA  
A
FRM  
FSM  
Power Dissipation  
P
350  
mW  
D
Operating and Storage  
Junction Temperature  
T ,T  
J
-65 to +150  
357  
°C  
stg  
Thermal Resistance  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE (T =25°C unless otherwise noted)  
A
SYMBOL TEST CONDITIONS  
MIN  
TYP  
11  
MAX  
UNIT  
μA  
V
I
V =20V  
R
50  
R
BV  
I =100μA  
40  
53  
R
R
V
F
I =10mA  
0.24  
0.35  
0.42  
8.5  
0.325  
0.4  
V
F
V
I =100mA  
F
V
F
V
F
I =200mA  
0.5  
V
F
C
V =4.0V, f=1 MHz  
R
10  
pF  
ns  
T
t
I =I =30mA, Rec. To 3.0mA, R =100Ω  
4.0  
5.0  
rr  
F
R
L
R1 (17-June 2005)  

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