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CMXSH-3TR PDF预览

CMXSH-3TR

更新时间: 2024-11-06 19:51:55
品牌 Logo 应用领域
CENTRAL 测试光电二极管
页数 文件大小 规格书
2页 551K
描述
Rectifier Diode, Schottky, 3 Element, 0.1A, 30V V(RRM), Silicon, PLASTIC, SUPERMINI-6

CMXSH-3TR 技术参数

生命周期:Active包装说明:R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.36配置:SEPARATE, 3 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.33 VJESD-30 代码:R-PDSO-G6
元件数量:3端子数量:6
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.35 W最大重复峰值反向电压:30 V
最大反向电流:100 µA最大反向恢复时间:0.005 µs
反向测试电压:25 V子类别:Other Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

CMXSH-3TR 数据手册

 浏览型号CMXSH-3TR的Datasheet PDF文件第2页 
CMXSH-3  
www.centralsemi.com  
SURFACE MOUNT  
TRIPLE ISOLATED  
SILICON SCHOTTKY DIODES  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMXSH-3 type  
contains three (3) Isolated Schottky Silicon Switching  
Diodes, manufactured by the epitaxial planar process,  
epoxy molded in a SUPERmini™ surface mount  
package, and designed for applications requiring low  
forward voltage drop.  
MARKING CODE: XH3  
SOT-26 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=10ms  
Power Dissipation  
V
30  
100  
RRM  
I
mA  
F
I
350  
mA  
FRM  
I
750  
mA  
FSM  
P
350  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =25V  
MIN  
TYP  
90  
MAX  
500  
UNITS  
nA  
μA  
V
I
I
R
R
R
V =25V, T =100°C  
25  
100  
R
A
BV  
I =100μA  
30  
R
R
V
V
V
I =2.0mA  
0.29  
0.40  
0.74  
7.0  
0.33  
0.45  
1.00  
V
F
F
F
F
I =15mA  
V
F
I =100mA  
V
F
C
V =1.0V, f=1.0MHz  
pF  
ns  
T
R
t
I =I =10mA, I =1.0mA, R =100Ω  
5.0  
rr  
F
R
rr  
L
R5 (12-February 2010)  

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