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CMXSH2-4LSTRLEADFREE PDF预览

CMXSH2-4LSTRLEADFREE

更新时间: 2024-11-06 20:59:55
品牌 Logo 应用领域
CENTRAL 测试
页数 文件大小 规格书
2页 483K
描述
Diode,

CMXSH2-4LSTRLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.59最大正向电压 (VF):0.325 V
最高工作温度:150 °C最低工作温度:-65 °C
最大功率耗散:0.35 W最大重复峰值反向电压:40 V
最大反向电流:50 µA最大反向恢复时间:0.005 µs
反向测试电压:20 V子类别:Other Diodes
表面贴装:YESBase Number Matches:1

CMXSH2-4LSTRLEADFREE 数据手册

 浏览型号CMXSH2-4LSTRLEADFREE的Datasheet PDF文件第2页 
CMXSH2-4LS  
SURFACE MOUNT  
www.centralsemi.com  
DUAL PAIR, IN-SERIES  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMXSH2-LS  
LOW V  
F
SILICON SCHOTTKY DIODES  
consists of Dual, In-Series pairs of Low V Silicon  
F
Schottky Diodes, and is manufactured in a SUPERmini™  
SOT-26 surface mount package. This device can  
be configured as a bridge rectifier using the optional  
mounting pad configuration on the following page.  
MARKING CODE: CXS4L  
SOT-26 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=10ms  
Power Dissipation  
V
40  
200  
RRM  
I
mA  
mA  
A
F
I
350  
FRM  
I
1.0  
FSM  
P
350  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL TEST CONDITIONS  
V =20V  
MIN  
TYP  
11  
MAX  
UNIT  
μA  
V
I
50  
R
R
BV  
I =100μA  
40  
53  
R
R
V
V
V
I =10mA  
0.24  
0.35  
0.42  
8.5  
0.325  
0.4  
V
F
F
F
F
I =100mA  
V
F
I =200mA  
0.5  
V
F
C
V =4.0V, f=1.0MHz  
10  
pF  
ns  
T
R
t
I =I =30mA, I =3.0mA, R =100Ω  
4.0  
5.0  
rr  
F
R
rr  
L
R2 (12-February 2010)  

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