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CMXD2004SLEADFREE PDF预览

CMXD2004SLEADFREE

更新时间: 2024-10-30 12:57:51
品牌 Logo 应用领域
CENTRAL 整流二极管开关测试光电二极管高压
页数 文件大小 规格书
2页 227K
描述
Rectifier Diode, 4 Element, 0.225A, 300V V(RRM), Silicon, SUPERMINI-6

CMXD2004SLEADFREE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SUPERMINI-6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.25Is Samacsys:N
配置:2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:4端子数量:6
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.225 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.35 W
认证状态:Not Qualified最大重复峰值反向电压:300 V
最大反向恢复时间:0.05 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

CMXD2004SLEADFREE 数据手册

 浏览型号CMXD2004SLEADFREE的Datasheet PDF文件第2页 
TM  
CMXD2004  
Central  
SUPER-MINI  
Semiconductor Corp.  
TRIPLE ISOLATED  
SURFACE MOUNT  
HIGH VOLTAGE  
DESCRIPTION:  
SWITCHING DIODE  
The  
CENTRAL  
SEMICONDUCTOR  
CMXD2004 type contains three (3) Isolated  
High Voltage Silicon Switching Diodes,  
manufactured by the epitaxial planar  
process, epoxy molded in a super-mini  
surface mount package, designed for  
applications requiring high voltage  
capability. Marking code is X04.  
SOT-26 CASE  
MAXIMUM RATINGS (T =25°C)  
A
SYMBOL  
UNITS  
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Peak Repetitive Reverse Current  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=1 ms  
Forward Surge Current, tp=1 s  
Power Dissipation  
V
V
240  
300  
200  
225  
625  
4000  
1000  
350  
V
V
R
RRM  
I
I
I
I
I
mA  
mA  
mA  
mA  
mA  
mW  
O
F
FRM  
FSM  
FSM  
P
D
Operating and Storage  
Junction Temperature  
T ,T  
J stg  
65 to +150  
357  
°C  
°C/W  
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS PER DIODE (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNIT  
I
I
V =240V  
100  
100  
nA  
µA  
V
V
pF  
ns  
R
R
R
V =240V, T =150°C  
R
A
BV  
V
C
I =100µA  
300  
R
R
I =100mA  
1.0  
5.0  
50  
F
T
F
V =0, f=1 MHz  
R
t
I =I =30mA, Rec. To 3.0mA, R =100Ω  
rr  
F R  
L
R1 ( 14-Sept 2000)  

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