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CMXD6001 PDF预览

CMXD6001

更新时间: 2024-09-14 22:12:03
品牌 Logo 应用领域
CENTRAL 二极管开关
页数 文件大小 规格书
2页 117K
描述
SUPERmini. TRIPLE ISOLATED SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE

CMXD6001 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:PLASTIC, SUPERMINI-6
针数:6Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.31配置:SEPARATE, 3 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.85 VJESD-30 代码:R-PDSO-G6
JESD-609代码:e0元件数量:3
端子数量:6最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.35 W认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向电流:0.0005 µA
最大反向恢复时间:3 µs反向测试电压:75 V
子类别:Other Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CMXD6001 数据手册

 浏览型号CMXD6001的Datasheet PDF文件第2页 
TM  
CMXD6001  
Central  
SUPERmini  
Semiconductor Corp.  
TRIPLE ISOLATED  
SURFACE MOUNT  
LOW LEAKAGE  
DESCRIPTION:  
SWITCHING DIODE  
The CENTRAL SEMICONDUCTOR CMXD6001  
type contains three (3) Isolated Silicon Switching  
Diodes, manufactured by the epitaxial planar  
process, epoxy molded in a SUPERmini surface  
mount package, designed for switching  
applications requiring extremely low leakage.  
Marking code is X01.  
SOT-26 CASE  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=1 µsec.  
Forward Surge Current, tp=1 sec.  
Power Dissipation  
V
75  
100  
250  
250  
4000  
1000  
350  
V
R
V
V
RRM  
I
mA  
mA  
mA  
mA  
mW  
F
I
I
I
FRM  
FSM  
FSM  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
stg  
-65 to +150  
357  
°C  
°C/W  
J
ΘJA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =75V  
MIN  
MAX  
UNITS  
I
500  
pA  
V
R
R
BV  
I =100µA  
100  
R
R
V
V
V
I =1.0mA  
0.85  
0.95  
1.1  
2.0  
3.0  
V
F
F
F
F
I =10mA  
V
F
I =100mA  
V
F
C
V =0, f=1 MHz  
pF  
µs  
T
R
t
I =I =10mA, R =100Rec. to 1.0mA  
rr  
R F  
L
R0 ( 11-September 2001)  

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