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CMXD4448BKPBFREE PDF预览

CMXD4448BKPBFREE

更新时间: 2024-09-16 05:40:35
品牌 Logo 应用领域
CENTRAL 测试
页数 文件大小 规格书
2页 551K
描述
Diode,

CMXD4448BKPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.59
最大正向电压 (VF):1 V最高工作温度:150 °C
最低工作温度:-65 °C最大功率耗散:0.35 W
最大重复峰值反向电压:100 V最大反向电流:0.025 µA
最大反向恢复时间:0.004 µs反向测试电压:20 V
子类别:Other Diodes表面贴装:YES
Base Number Matches:1

CMXD4448BKPBFREE 数据手册

 浏览型号CMXD4448BKPBFREE的Datasheet PDF文件第2页 
CMXD4448  
SURFACE MOUNT  
TRIPLE ISOLATED  
HIGH SPEED  
SILICON SWITCHING DIODES  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMXD4448  
type contains three (3) Isolated High Speed Silicon  
Switching Diodes, manufactured by the epitaxial planar  
process, epoxy molded in a SUPERmini™ surface  
mount package, and designed for applications requiring  
high speed switching.  
MARKING CODE: X48  
SOT-26 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
V
75  
100  
R
V
V
RRM  
I
250  
mA  
mA  
A
F
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
I
500  
FRM  
I
4.0  
FSM  
FSM  
I
1.0  
A
P
350  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
V =20V  
MIN  
MAX  
UNITS  
nA  
V
I
25  
R
R
BV  
I =5.0μA  
75  
R
R
R
BV  
I =100μA  
100  
V
R
V
I =100mA  
1.0  
4.0  
4.0  
V
F
F
C
V =0, f=1.0MHz  
pF  
ns  
T
R
t
I =I =10mA, I =1.0mA, R =100Ω  
rr  
R
F
rr  
L
R5 (12-February 2010)  

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