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CMXD2004STR PDF预览

CMXD2004STR

更新时间: 2024-10-30 19:52:07
品牌 Logo 应用领域
CENTRAL 测试光电二极管
页数 文件大小 规格书
2页 428K
描述
Rectifier Diode, 4 Element, 0.225A, 300V V(RRM), Silicon, SUPERMINI-6

CMXD2004STR 技术参数

生命周期:Active包装说明:SUPERMINI-6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.25配置:2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-G6
JESD-609代码:e0元件数量:4
端子数量:6最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.225 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.35 W
认证状态:Not Qualified最大重复峰值反向电压:300 V
最大反向电流:100 µA最大反向恢复时间:0.05 µs
反向测试电压:240 V子类别:Other Diodes
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

CMXD2004STR 数据手册

 浏览型号CMXD2004STR的Datasheet PDF文件第2页 
CMXD2004S  
CMXD2004SR  
www.centralsemi.com  
SURFACE MOUNT  
DUAL PAIR, IN-SERIES  
HIGH VOLTAGE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMXD2004S and  
CMXD2004SR consists of Dual Pair, In-Series pairs of  
High Voltage Silicon Switching Diodes, manufactured in  
a SUPERmini™ SOT-26 surface mount package, and  
designed for high voltage switching applications. This  
device can be configured as a 1200V switching diode,  
or as a bridge rectifier. See optional mounting pad  
configurations on following page.  
SILICON SWITCHING DIODES  
MARKING CODES: CMXD2004S: CX04S  
CMXD2004SR: C04SR  
SOT-26 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Average Forward Current  
V
240  
300  
R
V
V
RRM  
I
200  
mA  
mA  
mA  
A
O
Continuous Forward Current  
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
I
225  
F
I
625  
FRM  
I
4.0  
FSM  
FSM  
I
1.0  
A
P
350  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL TEST CONDITIONS  
MIN  
MAX  
100  
UNIT  
nA  
μA  
V
I
I
V =240V  
R
R
R
V =240V, T =150°C  
100  
R
A
BV  
I =100μA  
300  
R
R
V
I =100mA  
1.0  
5.0  
50  
V
F
F
C
V =0, f=1.0MHz  
pF  
ns  
T
R
t
I =I =30mA, I =3.0mA, R =100Ω  
rr  
F
R
rr  
L
R3 (12-February 2010)  

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