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CMXD2004_10 PDF预览

CMXD2004_10

更新时间: 2024-10-30 09:27:59
品牌 Logo 应用领域
CENTRAL 二极管开关高压
页数 文件大小 规格书
2页 551K
描述
SURFACE MOUNT TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES

CMXD2004_10 数据手册

 浏览型号CMXD2004_10的Datasheet PDF文件第2页 
CMXD2004  
SURFACE MOUNT  
TRIPLE ISOLATED  
HIGH VOLTAGE  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMXD2004  
type contains three (3) Isolated High Voltage Silicon  
Switching Diodes, manufactured by the epitaxial planar  
process, epoxy molded in a SUPERmini™ surface  
mount package, designed for applications requiring  
high voltage capability.  
SILICON SWITCHING DIODES  
MARKING CODE: X04  
SOT-26 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Average Forward Current  
V
240  
300  
R
V
V
RRM  
I
200  
mA  
mA  
mA  
A
O
Continuous Forward Current  
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
I
225  
F
I
625  
FRM  
I
4.0  
FSM  
FSM  
I
1.0  
A
P
350  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL TEST CONDITIONS  
MIN  
MAX  
100  
UNIT  
nA  
μA  
V
I
I
V =240V  
R
R
R
V =240V, T =150°C  
100  
R
A
BV  
I =100μA  
300  
R
R
V
I =100mA  
1.0  
5.0  
50  
V
F
F
C
V =0, f=1.0MHz  
pF  
ns  
T
R
t
I =I =30mA, I =3.0mA, R =100Ω  
rr  
F
R
rr  
L
R4 (9-February 2010)  

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