CMUT4401PBFREE

更新时间： 2024-12-01 13:06:59

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	344K
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中文翻译

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数据手册

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CMUT4401PBFREE 数据手册

CMUT4401 NPN

CMUT4403 PNP

www.centralsemi.com

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMUT4401 and

CMUT4403 are complementary silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in a ULTRAmini™ surface mount package,

designed for small signal general purpose amplifier and

switching applications.

MARKING CODE: CMUT4401: PC1

CMUT4403: FC2

SOT-523 CASE

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

CMUT4401

CMUT4403

UNITS

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

5.0

Continuous Collector Current

Power Dissipation

600

250

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

500

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C)

CMUT4401

CMUT4403

SYMBOL

TEST CONDITIONS

MIN

MAX

0.1

MIN

MAX

0.1

UNITS

μA

=35V, V =0.4V

CEV

=35V, V =0.4V

6.0

0.1

5.0

0.1

μA

BEV

I =100μA

CBO

CEO

EBO

I =1.0mA

I =100μA

0.40

0.75

0.95

1.2

0.40

0.75

0.95

1.3

I =150mA, I =15mA

CE(SAT)

BE(SAT)

I =500mA, I =50mA

I =150mA, I =15mA

0.75

I =500mA, I =50mA

=1.0V, I =0.1mA

100

=1.0V, I =1.0mA

=1.0V, I =10mA

=1.0V, I =150mA

300

=2.0V, I =150mA

100

200

300

=2.0V, I =500mA

250

=10V, I =20mA, f=100MHz

MHz

=5.0V, I =0, f=1.0MHz

6.5

8.5

=0.5V, I =0, f=1.0MHz

R1 (9-February 2010)

中文翻译

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与CMUT4401PBFREE相关器件

型号	品牌	获取价格	描述	数据表
CMUT4401TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ULTRAMI
CMUT4401TRLEADFREE	CENTRAL	获取价格	Transistor
CMUT4401TRPBFREE	CENTRAL	获取价格	Transistor,
CMUT4403	CENTRAL	获取价格	SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
CMUT4403BK	CENTRAL	获取价格	Transistor
CMUT4403BKLEADFREE	CENTRAL	获取价格	Transistor
CMUT4403BKPBFREE	CENTRAL	获取价格	Transistor,
CMUT4403PBFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor,
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CMUT4403TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, ULTRAMI