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CMUT4401TR PDF预览

CMUT4401TR

更新时间: 2024-12-01 20:44:27
品牌 Logo 应用领域
CENTRAL 开关光电二极管晶体管
页数 文件大小 规格书
2页 343K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ULTRAMINI, PLASTIC PACKAGE-3

CMUT4401TR 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.83
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz最大关闭时间(toff):255 ns
最大开启时间(吨):35 nsBase Number Matches:1

CMUT4401TR 数据手册

 浏览型号CMUT4401TR的Datasheet PDF文件第2页 
CMUT4401 NPN  
CMUT4403 PNP  
www.centralsemi.com  
SURFACE MOUNT  
COMPLEMENTARY  
SILICON TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMUT4401 and  
CMUT4403 are complementary silicon transistors  
manufactured by the epitaxial planar process, epoxy  
molded in a ULTRAmini™ surface mount package,  
designed for small signal general purpose amplifier and  
switching applications.  
MARKING CODE: CMUT4401: PC1  
CMUT4403: FC2  
SOT-523 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
CMUT4401  
CMUT4403  
UNITS  
V
A
V
V
V
60  
40  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
40  
V
V
6.0  
5.0  
Continuous Collector Current  
Power Dissipation  
I
600  
250  
mA  
mW  
°C  
C
P
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
500  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
CMUT4401  
CMUT4403  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
0.1  
MIN  
MAX  
0.1  
UNITS  
μA  
I
V
=35V, V =0.4V  
-
-
CEV  
CE  
EB  
I
V
=35V, V =0.4V  
EB  
-
60  
40  
6.0  
-
0.1  
-
40  
40  
5.0  
-
0.1  
μA  
V
BEV  
CE  
BV  
BV  
BV  
I =100μA  
-
-
CBO  
CEO  
EBO  
C
I =1.0mA  
-
-
V
C
I =100μA  
-
0.40  
0.75  
0.95  
1.2  
-
-
0.40  
0.75  
0.95  
1.3  
-
V
E
V
V
V
V
I =150mA, I =15mA  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =500mA, I =50mA  
-
-
V
C
B
I =150mA, I =15mA  
0.75  
-
0.75  
-
V
C
B
I =500mA, I =50mA  
V
C
B
h
h
h
h
h
h
V
=1.0V, I =0.1mA  
20  
40  
80  
100  
-
30  
60  
100  
-
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
BE  
C
V
V
V
V
V
V
V
V
=1.0V, I =1.0mA  
-
-
FE  
C
=1.0V, I =10mA  
-
-
FE  
C
=1.0V, I =150mA  
300  
-
-
FE  
C
=2.0V, I =150mA  
100  
20  
200  
-
300  
-
FE  
C
=2.0V, I =500mA  
40  
250  
-
-
FE  
C
f
=10V, I =20mA, f=100MHz  
-
-
MHz  
pF  
T
C
C
=5.0V, I =0, f=1.0MHz  
6.5  
30  
8.5  
30  
ob  
ib  
E
C
=0.5V, I =0, f=1.0MHz  
-
-
pF  
C
R1 (9-February 2010)  

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