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CMUT3906TRPBFREE

更新时间： 2024-12-01 13:07:03

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	345K
描述
Transistor,

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中文翻译

获取价格

技术参数
数据手册

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CMUT3906TRPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	最大集电极电流 (IC)：	0.2 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.25 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	250 MHz
Base Number Matches：	1

CMUT3906TRPBFREE 数据手册

CMUT3904 NPN

CMUT3906 PNP

www.centralsemi.com

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMUT3904,

CMUT3906 types are complementary silicon transistors

manufactured by the epitaxial planar process, epoxy

molded in an ULTRAmini™ surface mount package,

designed for small signal general purpose amplifier and

switching applications.

MARKING CODES: CMUT3904: AC1

CMUT3906: AC2

SOT-523 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

CMUT3904

CMUT3906

UNITS

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

5.0

Continuous Collector Current

Power Dissipation

200

250

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

500

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

CMUT3904

MIN MAX

CMUT3906

MIN MAX

SYMBOL

TEST CONDITIONS

=30V, V =3.0V

UNITS

6.0

5.0

CEV

I =10μA

CBO

CEO

I =1.0mA

I =10μA

EBO

I =10mA, I =1.0mA

0.20

0.30

0.25

0.40

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

0.65 0.85

I =50mA, I =5.0mA

0.95

300

=1.0V, I =0.1mA

100

=1.0V, I =1.0mA

=1.0V, I =10mA

300

100

=1.0V, I =50mA

=1.0V, I =100mA

R2 (9-February 2010)

中文翻译

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