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CMST2222ATRPBFREE PDF预览

CMST2222ATRPBFREE

更新时间: 2024-11-19 13:06:59
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CENTRAL 晶体晶体管
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CMST2222ATRPBFREE 数据手册

 浏览型号CMST2222ATRPBFREE的Datasheet PDF文件第2页 
TM  
Ce n t r a l  
NEW  
S e m ic o n d u c t o r Co r p .  
CMST2222A  
SUPER-MINI  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The  
CENTRAL  
SEMICONDUCTOR  
CMST2222A type is an NPN silicon transistor  
manufactured by the epitaxial planar process,  
epoxy molded in a super-mini surface mount  
package, designed for small signal general  
purpose and switching applications.  
TM  
SUPER  
SUPER  
mini  
SOT-323 CASE  
o
MAXIMUM RATINGS: (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
75  
40  
V
V
CBO  
V
CEO  
V
6.0  
600  
250  
V
EBO  
I
mA  
mW  
C
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
T ,T  
-65 to +150  
500  
C
J stg  
o
Θ
C/W  
JA  
o
ELECTRICAL CHARACTERISTICS: (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
10  
UNITS  
I
V
V
V
V
=60V  
nA  
µA  
nA  
nA  
V
CBO  
CB  
CB  
EB  
CE  
o
I
=60V, T =125 C  
10  
CBO  
A
I
=3.0V  
10  
EBO  
I
=60V, V =3.0V  
10  
CEV  
EB  
BV  
I =10µA  
75  
40  
CBO  
C
BV  
I =10mA  
V
CEO  
C
BV  
I =10µA  
6.0  
V
EBO  
E
V
I =150mA, I =15mA  
0.3  
1.0  
1.2  
2.0  
V
CE(SAT)  
C
B
V
I =500mA, I =50mA  
V
CE(SAT)  
C
B
V
I =150mA, I =15mA  
0.6  
V
BE(SAT)  
C
B
V
I =500mA, I =50mA  
V
BE(SAT)  
C
B
h
V
=10V, I =0.1mA  
35  
50  
75  
FE  
CE  
CE  
CE  
C
h
V
V
=10V, I =1.0mA  
C
FE  
h
=10V, I =10mA  
FE  
C
246  

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