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CMPT2222ABKPBFREE

更新时间： 2024-11-08 13:06:55

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	83K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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CMPT2222ABKPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.35 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	300 MHz
Base Number Matches：	1

CMPT2222ABKPBFREE 数据手册

Ce n t r a l

CMPT2222A

S e m ic o n d u c t o r Co r p .

NPN SILICON TRANSISTOR

DESCRIPTION:

The

CENTRAL

SEMICONDUCTOR

CMPT2222A type is an NPN silicon transistor

manufactured by the epitaxial planar process,

epoxy molded in a surface mount package,

designed for small signal general purpose and

switching applications.

Marking Code is C1P.

SOT-23 CASE

MAXIMUM RATINGS (T =25 C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

6.0

600

350

CBO

CEO

EBO

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

357

C/W

J stg

ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

µA

=60V

=60V, T =125 C

=60V, V =3.0V

=3.0V

CBO

CEV

EBO

CBO

CEO

EBO

CE(SAT)

BE(SAT)

I =10µA

6.0

I =10mA

I =10µA

I =150mA, I =15mA

0.3

1.0

1.2

2.0

I =500mA, I =50mA

I =150mA, I =15mA

0.6

I =500mA, I =50mA

=10V, I =0.1mA

=10V, I =1.0mA

=10V, I =10mA

=1.0V, I =150mA

158

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与CMPT2222ABKPBFREE相关器件

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CMPT2222ATR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,