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CMPT2484BKPBFREE

更新时间： 2024-09-21 13:06:59

品牌	Logo	应用领域
CENTRAL		晶体小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
2页	81K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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CMPT2484BKPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	最大集电极电流 (IC)：	0.05 A
配置：	Single	最小直流电流增益 (hFE)：	250
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.35 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

CMPT2484BKPBFREE 数据手册

Ce n t r a l

CMPT2484

S e m ic o n d u c t o r Co r p .

NPN SILICON

LOW NOISE TRANSISTOR

DESCRIPTION:

The

CENTRAL

SEMICONDUCTOR

CMPT2484 type is an NPN silicon low noise

transistormanufacturedbytheepitaxialplanar

process, epoxy molded in a surface mount

package, designed for low noise

amplifier applications.

SOT-23 CASE

Marking Code is C1U.

MAXIMUM RATINGS (T =25 C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

6.0

CBO

CEO

EBO

Power Dissipation

350

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

357

C/W

J stg

ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

µA

=45V

=45V, T =150 C

=5.0V

CBO

EBO

CBO

CEO

EBO

CE(SAT)

BE(ON)

I =10µA

5.0

I =10mA

I =10µA

I =1.0mA, I =100µA

0.35

0.95

---

800

6.0

=5.0V, I =1.0mA

250

---

=5.0V, I =10mA

=5.0V, I =0, f=1.0MHz

=0.5V, I =0, f=1.0MHz

6.0

=5.0V, I =10µA, RS=10kΩ

f=1.0kHz, BW=200Hz

3.0

162

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