Datasheet > CMPT2907AE_10

CMPT2907AE_10

更新时间： 2024-09-21 09:27:43

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	329K
描述
ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR

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CMPT2907AE_10 数据手册

CMPT2907AE

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT2907AE

is an Enhanced version of the CMPT2907A PNP

Switching transistor in a SOT-23 surface mount

package, designed for switching applications, interface

circuit and driver circuit applications.

MARKING CODE: C2FE

FEATURED ENHANCED SPECIFICATIONS:

♦ BV

from 60V min to 90V min. (115V TYP)

CBO

SOT-23 CASE

♦ V

from 1.6V max to 0.7V max. (0.280V TYP)

CE(SAT)

♦ h

from 50 min to 75 min. (110 TYP)

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

5.0

600

350

♦

CBO

CEO

EBO

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

µA

=50V

CBO

CEV

=50V, T =125°C

=30V, V =0.5V

♦^BV

I =10µA

115

CBO

CEO

I =10mA

I =10µA

5.0

EBO

♦

I =150mA, I =15mA

0.103

0.280

0.2

0.7

1.3

2.6

CE(SAT)

BE(SAT)

♦

I =500mA, I =50mA

I =150mA, I =15mA

I =500mA, I =50mA

♦

=10V, I =0.1mA

100

205

110

=10V, I =1.0mA

=10V, I =10mA

=10V, I =150mA

300

=10V, I =500mA

♦

=20V, I =50mA, f=100MHz

200

MHz

=10V, I =0, f=1.0MHz

8.0

=2.0V, I =0, f=1.0MHz

♦

Enhanced specification

R2 (1-February 2010)

中文翻译

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