CMPT2907AEBK

更新时间： 2024-09-21 13:07:03

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	82K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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CMPT2907AEBK 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.69
最大集电极电流 (IC)：	0.6 A	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.35 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	200 MHz	Base Number Matches：	1

CMPT2907AEBK 数据手册

Ce n t r a l

CMPT2907A

S e m ic o n d u c t o r Co r p .

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR

CMPT2907A type is an PNP silicon transistor

manufacturedbytheepitaxialplanarprocess,

epoxy molded in a surface mount package,

designed for small signal general purpose

and switching applications.

Marking Code is C2F.

SOT-23 CASE

MAXIMUM RATINGS (T =25 C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

5.0

600

350

CBO

CEO

EBO

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

-65 to +150

357

C/W

J stg

ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=50V

=50V, T =125 C

=30V, V =0.5V

µA

CBO

CEV

CBO

CEO

EBO

CE(SAT)

BE(SAT)

I =10µA

5.0

I =10mA

I =10µA

I =150mA, I =15mA

0.4

1.6

1.3

2.6

I =500mA, I =50mA

I =150mA, I =15mA

I =500mA, I =50mA

=10V, I =0.1mA

100

=10V, I =1.0mA

=10V, I =10mA

=10V, I =150mA

300

164

中文翻译

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