Datasheet > CMPT2222AE_10

CMPT2222AE_10

更新时间： 2024-11-08 09:27:43

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	331K
描述
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR

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CMPT2222AE_10 数据手册

CMPT2222AE

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT2222AE

is an Enhanced version of the CMPT2222A NPN

Switching transistor in a SOT-23 surface mount

package, designed for switching applications, interface

circuit and driver circuit applications.

MARKING CODE: C1PE

FEATURED ENHANCED SPECIFICATIONS:

♦ BV

from 75V min to 100V min. (145V TYP)

CBO

SOT-23 CASE

♦ V from 1.0V max to 0.5V max. (0.12V TYP)

♦ h from 40 to 60 min. (130 TYP)

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

♦

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

100

6.0

600

350

CBO

CEO

EBO

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

stg

-65 to +150

357

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

=60V

=60V, T =125°C

=60V, V =3.0V

=3.0V

CBO

CEV

EBO

CBO

CEO

EBO

CE(SAT)

BE(SAT)

I =10µA

100

6.0

145

♦

♦^BV

I =10mA

I =10μA

♦^V

I =150mA, I =15mA

0.92

0.12

0.15

0.50

1.2

♦^V

I =500mA, I =50mA

I =150mA, I =15mA

0.6

I =500mA, I =50mA

2.0

=10V, I =0.1mA

100

210

205

150

♦

♦^h

=10V, I =1.0mA

♦^h

=10V, I =10mA

=1.0V, I =150mA

♦

=10V, I =150mA

300

=10V, I =500mA

130

♦

=20V, I =20mA, f=100MHz

=10V, I =0, f=1.0MHz

=0.5V, I =0, f=1.0MHz

300

MHz

8.0

♦ Enhanced specification

R2 (1-February 2010)

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