CMPP6027R
CMPP6028R
www.centralsemi.com
SURFACE MOUNT SILICON
PROGRAMMABLE UNIJUNCTION
TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPP6027R and
CMPP6028R are silicon programmable unijunction
transistors, manufactured in a surface mount SOT-23
package, designed for adjustable (programmable)
characteristics such as, valley current (I ), peak current
V
(I ), and intrinsic standoff ratio (η).
P
MARKING CODES: CMPP6027R: P27
CMPP6028R: P28
SOT-23 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Gate-Cathode Forward Voltage
Gate-Cathode Reverse Voltage
Gate-Anode Reverse Voltage
V
40
GKF
GKR
GAR
V
V
5.0
V
40
40
V
Anode-Cathode Voltage
V
V
AK
TSM
TRM
TRM
Peak Non-Repetitive Forward Current (t=10μs)
Peak Repetitive Forward Current (t=20μs, D.C.=1.0%)
Peak Repetitive Forward Current (t=100μs, D.C.=1.0%)
DC Forward Anode Current
I
5.0
A
I
I
2.0
A
1.0
A
I
150
mA
mA
mW
°C
°C
°C/W
T
DC Gate Current
I
50
G
Power Dissipation (Note 1)
P
167
D
Storage Temperature
T
-55 to +150
-50 to +100
450
stg
Operating Junction Temperature
Thermal Resistance (Note 1)
T
J
Θ
JA
Note 1: Mounted on 2 inch square FR-4 PCB with minimum copper pad area.
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
CMPP6027R
CMPP6028R
SYMBOL
TEST CONDITIONS
V =40V
MIN MAX
MIN MAX
UNITS
I
I
I
I
I
I
I
10
50
10
50
nA
GAO
GKS
P
S
V =40V
nA
S
V =10V, R =1.0M
2.0
0.15
1.0
μA
S
G
V =10V, R =10k
5.0
μA
P
S
G
V =10V, R =1.0M
50
25
μA
V
S
G
V =10V, R =10k
70
25
μA
V
S
G
V =10V, R =200
1.5
1.0
mA
V
S
G
V
V
V
V
V =10V, R =1.0M
0.2 1.6
0.2 0.6
1.5
0.2 0.6
0.2 0.6
1.5
V
T
T
F
O
S
G
V =10V, R =10k
V
S
G
I =50mA
V
F
V =20V, C =0.2μF
6.0
6.0
V
ns
B
C
t
V =20V, C =0.2μF
80
80
r
B
C
R0 (24-June 2015)