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CMNDM8001PBFREE

更新时间： 2024-11-18 13:06:55

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	429K
描述
Small Signal Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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CMNDM8001PBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.7	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

CMNDM8001PBFREE 数据手册

CMNDM8001

SURFACE MOUNT

P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMNDM8001

is an Enhancement-mode P-Channel MOSFET,

manufactured by the P-Channel DMOS Process,

designed for high speed pulsed amplifier and driver

applications. This MOSFET offers Low r

Low Threshold Voltage.

and

DS(ON)

MARKING CODE: BC

FEATURES:

• Low 0.5mm Package Profile

SOT-953 CASE

• Device is Halogen Free by design

• Low r

DS(ON)

APPLICATIONS:

• Low Threshold Voltage

• Load/Power Switches

• Logic Level Compatible

• Power Supply Converter Circuits

• Battery Powered Portable Equipment

• Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953

Surface Mount Package

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Continuous Drain Current

100

°C

200

Power Dissipation

250

Operating and Storage Junction Temperature

T , T

-65 to +150

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

μA

, I

=10V, V =0

1.0

GSSF GSSR

=20V, V =0

DSS

=0, I =100μA

DSS

GS(th)

=V , I =250μA

0.6

1.1

8.0

DS GS

=4.0V, I =10mA

DS(ON)

=2.5V, I =10mA

=1.5V, I =1.0mA

=10V, I =100mA

100

=3.0V, V =0, f=1.0MHz

rss

iss

=3.0V, V =0, f=1.0MHz

oss

=3.0V, V =2.5V, I =10mA

off

=3.0V, V =2.5V, I =10mA

R1 (25-January 2010)

中文翻译

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