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CMNTVS12VTRLEADFREE PDF预览

CMNTVS12VTRLEADFREE

更新时间: 2024-11-18 13:06:59
品牌 Logo 应用领域
CENTRAL 瞬态抑制器二极管电视光电二极管局域网
页数 文件大小 规格书
3页 994K
描述
Trans Voltage Suppressor Diode, 9V V(RWM), Unidirectional,

CMNTVS12VTRLEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.58
击穿电压标称值:12 V最大钳位电压:18 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码:e4
湿度敏感等级:1极性:UNIDIRECTIONAL
最大重复峰值反向电压:9 V子类别:Transient Suppressors
表面贴装:YES端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
Base Number Matches:1

CMNTVS12VTRLEADFREE 数据手册

 浏览型号CMNTVS12VTRLEADFREE的Datasheet PDF文件第2页浏览型号CMNTVS12VTRLEADFREE的Datasheet PDF文件第3页 
CMNTVS12V  
www.centralsemi.com  
SURFACE MOUNT  
UNI-DIRECTIONAL  
12 VOLT SILICON QUAD TVS ARRAY  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMNTVS12V  
is a 4-line TVS arrays in a space saving SOT-953  
surface mount package. This device is designed to  
protect sensitive equipment against ESD damage.  
MARKING CODE: CY  
SOT-953 CASE  
FEATURES:  
Device is Halogen Free by design  
• Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953  
APPLICATIONS:  
• PDAs  
Surface Mount Package  
• Low Capacitance  
• Memory Card Ports  
• Mobile Phones  
• Instrumentation  
• Low Leakage Current  
• ESD Protection IEC 61000-4-2: Level 4 (8kV) HBM  
• 4-Line Array  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
W
A
Peak Power Dissipation (8x20μs)  
P
18  
8.0  
PK  
ESD Voltage (Human Body Model - HBM)  
Operating and Storage Junction Temperature  
V
kV  
ESD  
T , T  
-55 to +150  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C)  
A
Breakdown  
Voltage  
Maximum  
Maximum  
Maximum  
Maximum  
Leakage Current  
Clamping Voltage  
Capacitance  
@ 0V Bias  
Capacitance  
@ 3V Bias  
V
@ 5.0mA  
I
@ V  
V
@
I
BR  
RWM  
RWM  
C
PP  
MIN  
V
NOM  
V
MAX  
V
μA  
V
V
A
pF  
pF  
11.4  
12.0  
12.7  
0.5  
9.0  
18  
1.0  
10  
6.0  
R3 (3-January 2012)  

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