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CMNTVS12VTRLEADFREE

更新时间： 2024-01-14 21:46:44

品牌	Logo	应用领域
CENTRAL		瞬态抑制器二极管电视光电二极管局域网
页数	文件大小	规格书
3页	994K
描述
Trans Voltage Suppressor Diode, 9V V(RWM), Unidirectional,

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中文翻译

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技术参数
数据手册

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CMNTVS12VTRLEADFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.8
Is Samacsys：	N	击穿电压标称值：	12 V
最大钳位电压：	18 V	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
极性：	UNIDIRECTIONAL	最大重复峰值反向电压：	9 V
子类别：	Transient Suppressors	表面贴装：	YES
Base Number Matches：	1

CMNTVS12VTRLEADFREE 数据手册

CMNTVS12V

www.centralsemi.com

SURFACE MOUNT

UNI-DIRECTIONAL

12 VOLT SILICON QUAD TVS ARRAY

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMNTVS12V

is a 4-line TVS arrays in a space saving SOT-953

surface mount package. This device is designed to

protect sensitive equipment against ESD damage.

MARKING CODE: CY

SOT-953 CASE

FEATURES:

Device is Halogen Free by design

•

• Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953

APPLICATIONS:

• PDAs

Surface Mount Package

• Low Capacitance

• Memory Card Ports

• Mobile Phones

• Instrumentation

• Low Leakage Current

• ESD Protection IEC 61000-4-2: Level 4 (8kV) HBM

• 4-Line Array

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Peak Power Dissipation (8x20μs)

8.0

ESD Voltage (Human Body Model - HBM)

Operating and Storage Junction Temperature

ESD

T , T

-55 to +150

°C

stg

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C)

Breakdown

Voltage

Maximum

Leakage Current

Clamping Voltage

Capacitance

@ 0V Bias

Capacitance

@ 3V Bias

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C)

@ 5.0mA

@ V

RWM

MIN

NOM

MAX

μA

11.4

12.0

12.7

0.5

9.0

1.0

6.0

R3 (3-January 2012)

12 3

中文翻译

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