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CMNTVS12VTR PDF预览

CMNTVS12VTR

更新时间: 2024-11-18 20:05:55
品牌 Logo 应用领域
CENTRAL 局域网光电二极管
页数 文件大小 规格书
3页 1009K
描述
Trans Voltage Suppressor Diode, 18W, 9V V(RWM), Unidirectional, 4 Element, Silicon, 1 X 0.80 MM PACKAGE-5

CMNTVS12VTR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:R-PDSO-F5
针数:5Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.55其他特性:LOW CAPACITANCE
最大击穿电压:12.7 V最小击穿电压:11.4 V
击穿电压标称值:12 V最大钳位电压:18 V
配置:COMMON ANODE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F5
JESD-609代码:e0最大非重复峰值反向功率耗散:18 W
元件数量:4端子数量:5
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:9 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:TIN LEAD端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CMNTVS12VTR 数据手册

 浏览型号CMNTVS12VTR的Datasheet PDF文件第2页浏览型号CMNTVS12VTR的Datasheet PDF文件第3页 
CMNTVS12V  
www.centralsemi.com  
SURFACE MOUNT  
UNI-DIRECTIONAL  
12 VOLT SILICON QUAD TVS ARRAY  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMNTVS12V  
is a 4-line TVS arrays in a space saving SOT-953  
surface mount package. This device is designed to  
protect sensitive equipment against ESD damage.  
MARKING CODE: CY  
SOT-953 CASE  
FEATURES:  
Device is Halogen Free by design  
• Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953  
APPLICATIONS:  
• PDAs  
Surface Mount Package  
• Low Capacitance  
• Memory Card Ports  
• Mobile Phones  
• Instrumentation  
• Low Leakage Current  
• ESD Protection IEC 61000-4-2: Level 4 (8kV) HBM  
• 4-Line Array  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
W
A
Peak Power Dissipation (8x20µs)  
P
18  
8.0  
PK  
ESD Voltage (Human Body Model - HBM)  
Operating and Storage Junction Temperature  
V
kV  
ESD  
T , T  
-55 to +150  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C)  
A
Breakdown  
Voltage  
Maximum  
Maximum  
Maximum  
Maximum  
Leakage Current  
Clamping Voltage  
Capacitance  
@ 0V Bias  
Capacitance  
@ 3V Bias  
V
@ 5.0mA  
I
@ V  
V
@
I
BR  
RWM  
RWM  
C
PP  
MIN  
V
NOM  
V
MAX  
V
µA  
V
V
A
pF  
pF  
11.4  
12.0  
12.7  
0.5  
9.0  
18  
1.0  
10  
6.0  
R2 (25-January 2010)  

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