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CMNT3906ETR PDF预览

CMNT3906ETR

更新时间: 2024-11-21 13:06:59
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 364K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-5

CMNT3906ETR 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5针数:5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.72
Is Samacsys:N最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-F5
JESD-609代码:e4湿度敏感等级:1
元件数量:1端子数量:5
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):300 ns
最大开启时间(吨):70 nsBase Number Matches:1

CMNT3906ETR 数据手册

 浏览型号CMNT3906ETR的Datasheet PDF文件第2页 
CMNT3904E NPN  
CMNT3906E PNP  
www.centralsemi.com  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMNT3904E  
and CMNT3906E Low V NPN and PNP  
COMPLEMENTARY  
SILICON TRANSISTOR  
CE(SAT)  
Transistors, respectively, are designed for applications  
where ultra small size and power dissipation are the  
prime requirements. Packaged in an FEMTOmini™  
SOT-953 package, these components provide  
performance characteristics suitable for the most  
demanding size constrained applications.  
MARKING CODES: CMNT3904E: CL  
CMNT3906E: CM  
SOT-953 CASE  
FEATURES  
APPLICATIONS  
• DC / DC Converters  
• Voltage Clamping  
• Protection Circuits  
• Very Small Package Size  
• Low Package Profile, 0.5mm  
• 200mA Collector Current  
• Low V  
(0.1V Typ @ 50mA)  
• Battery powered equipment including:  
Cell Phones, Digital Cameras, Pagers,  
PDAs, Laptop Computers, etc.  
CE(SAT)  
• Small, FEMTOmini™ 1 x 0.8mm,  
SOT-953 Surface Mount Package  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
V
V
V
60  
40  
CBO  
CEO  
EBO  
V
Emitter-Base Voltage  
6.0  
V
Continuous Collector Current  
Power Dissipation  
I
200  
mA  
mW  
°C  
C
P
250  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
500  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
NPN  
TYP  
PNP  
TYP  
SYMBOL  
TEST CONDITIONS  
=30V, V =3.0V  
MIN  
MAX  
UNITS  
I
V
50  
nA  
V
CEV  
CE  
I =10µA  
EB  
BV  
BV  
BV  
60  
40  
115  
60  
90  
55  
CBO  
CEO  
C
I =1.0mA  
V
C
I =10µA  
6.0  
7.5  
7.9  
V
EBO  
E
V
V
V
V
I =10mA, I =1.0mA  
.057  
0.1  
.05  
0.1  
0.2  
V
C
B
I =50mA, I =5.0mA  
0.1  
V
C
B
I =10mA, I =1.0mA  
0.65  
0.75  
0.85  
240  
235  
0.75  
0.85  
130  
150  
0.85  
0.95  
V
C
B
I =50mA, I =5.0mA  
V
C
B
h
h
V
=1.0V, I =0.1mA  
90  
CE  
CE  
C
V
=1.0V, I =1.0mA  
100  
FE  
C
Enhanced Specification  
R2 (25-January 2010)  

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