CMNT3904EBK

更新时间： 2024-02-10 21:46:14

品牌	Logo	应用领域
CENTRAL		晶体小信号双极晶体管
页数	文件大小	规格书
2页	364K
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中文翻译

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数据手册

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CMNT3904EBK 数据手册

CMNT3904E NPN

CMNT3906E PNP

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMNT3904E

and CMNT3906E Low V NPN and PNP

COMPLEMENTARY

SILICON TRANSISTOR

CE(SAT)

Transistors, respectively, are designed for applications

where ultra small size and power dissipation are the

prime requirements. Packaged in an FEMTOmini™

SOT-953 package, these components provide

performance characteristics suitable for the most

demanding size constrained applications.

MARKING CODES: CMNT3904E: CL

CMNT3906E: CM

SOT-953 CASE

FEATURES

APPLICATIONS

• DC / DC Converters

• Voltage Clamping

• Protection Circuits

• Very Small Package Size

• Low Package Profile, 0.5mm

• 200mA Collector Current

• Low V

(0.1V Typ @ 50mA)

• Battery powered equipment including:

Cell Phones, Digital Cameras, Pagers,

PDAs, Laptop Computers, etc.

CE(SAT)

• Small, FEMTOmini™ 1 x 0.8mm,

SOT-953 Surface Mount Package

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

♦Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

EBO

♦

Emitter-Base Voltage

6.0

Continuous Collector Current

Power Dissipation

200

°C

250

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

500

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

NPN

TYP

PNP

TYP

SYMBOL

TEST CONDITIONS

=30V, V =3.0V

MIN

MAX

UNITS

CEV

I =10µA

♦

115

CBO

CEO

I =1.0mA

♦

I =10µA

6.0

7.5

7.9

EBO

I =10mA, I =1.0mA

.057

0.1

.05

0.1

0.2

I =50mA, I =5.0mA

0.1

I =10mA, I =1.0mA

0.65

0.75

0.85

240

235

0.75

0.85

130

150

0.85

0.95

I =50mA, I =5.0mA

♦

=1.0V, I =0.1mA

=1.0V, I =1.0mA

100

♦ Enhanced Specification

R2 (25-January 2010)

中文翻译

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