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CMLD6263CTRPBFREE PDF预览

CMLD6263CTRPBFREE

更新时间: 2024-11-19 13:06:59
品牌 Logo 应用领域
CENTRAL 整流二极管肖特基二极管测试光电二极管高压
页数 文件大小 规格书
2页 98K
描述
Rectifier Diode, 70V V(RRM),

CMLD6263CTRPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.76
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.41 V
最高工作温度:150 °C最低工作温度:-65 °C
最大功率耗散:0.25 W最大重复峰值反向电压:70 V
最大反向电流:0.2 µA最大反向恢复时间:0.005 µs
反向测试电压:50 V子类别:Signal Diodes
表面贴装:YESBase Number Matches:1

CMLD6263CTRPBFREE 数据手册

 浏览型号CMLD6263CTRPBFREE的Datasheet PDF文件第2页 
TM  
CMLD6263  
Central  
SURFACE MOUNT  
Semiconductor Corp.  
PICOmini  
DUAL, ISOLATED  
HIGH VOLTAGE  
FEATURES:  
SILICON SCHOTTKY DIODES  
HIGH VOLTAGE (70V)  
LOW FORWARD VOLTAGE  
GALVANICALLY ISOLATED  
SOT-563 CASE  
DESCRIPTION:  
The Central Semiconductor CMLD6263 incorporates two galvanically isolated, High Voltage, low V  
F
Silicon Diodes in a space saving SOT-563 surface mount package. These diodes are designed for fast  
switching applications requiring a low forward voltage drop.  
MARKING CODE: 63D  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
Forward Surge Current, tp=1.0 s  
Power Dissipation  
V
70  
15  
50  
V
RRM  
F
FSM  
I
I
P
mA  
mA  
mW  
250  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
stg  
JA  
-65 to +150  
500  
°C  
°C/W  
J
Θ
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
V =50V  
98  
200  
nA  
V
mV  
pF  
ns  
R
R
BV  
V
C
t
I =10µA  
70  
R
R
I =1.0mA  
395  
410  
2.0  
5.0  
F
T
rr  
F
V =0V, f=1.0MHz  
R
I =I =10mA, I =1.0mA, R =100Ω  
rr  
R
F
L
R1 ( 20-February 2003)  

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