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CMLDM7002A_10 PDF预览

CMLDM7002A_10

更新时间： 2024-11-23 09:27:27
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CENTRAL /
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2页 623K
描述
SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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CMLDM7002A_10 数据手册

 浏览型号CMLDM7002A_10的Datasheet PDF文件第2页 
CMLDM7002A  
CMLDM7002AG*  
CMLDM7002AJ  
www.centralsemi.com  
SURFACE MOUNT  
DUAL N-CHANNEL  
ENHANCEMENT-MODE  
SILICON MOSFET  
DESCRIPTION:  
These CENTRAL SEMICONDUCTOR devices are  
dual Enhancement-mode N-Channel Field Effect  
Transistors, manufactured by the N-Channel DMOS  
Process, designed for high speed pulsed amplifier and  
driver applications. The CMLDM7002A utilizes the USA  
pinout configuration, while the CMLDM7002AJ utilizes  
the Japanese pinout configuration. These devices offer  
low r  
and low V .  
DS (ON)  
DS(ON)  
MARKING CODES: CMLDM7002A:  
L02  
SOT-563 CASE  
CMLDM7002AG*: C2G  
CMLDM7002AJ:  
Device is Halogen Free by design  
*
02J  
MAXIMUM RATINGS: (T =25°C)  
Drain-Source Voltage  
Drain-Gate Voltage  
Gate-Source Voltage  
SYMBOL  
UNITS  
V
V
A
V
V
V
I
I
60  
60  
40  
280  
280  
1.5  
1.5  
350  
300  
DS  
DG  
GS  
D
S
V
Continuous Drain Current  
mA  
mA  
A
Continuous Source Current (Body Diode)  
Maximum Pulsed Drain Current  
Maximum Pulsed Source Current  
Power Dissipation (Note 1)  
Power Dissipation (Note 2)  
Power Dissipation (Note 3)  
Operating and Storage Junction Temperature  
Thermal Resistance  
I
I
DM  
SM  
A
P
P
P
mW  
mW  
mW  
°C  
D
D
D
150  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
1.0  
UNITS  
nA  
μA  
μA  
mA  
V
V
V
V
V
I
I
I
I
, I  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=20V, V =0  
=60V, V =0  
GS  
GSSF GSSR  
DSS  
DSS  
GS  
DS  
DS  
GS  
GS  
DS  
=60V, V =0, T =125°C  
500  
GS  
J
=10V, V =10V  
500  
60  
1.0  
D(ON)  
DS  
BV  
=0, I =10μA  
D
DSS  
GS(th)  
DS(ON)  
DS(ON)  
SD  
V
V
V
V
=V , I =250μA  
2.5  
1.0  
0.15  
1.2  
2.0  
3.5  
3.0  
5.0  
DS GS  
D
=10V, I =500mA  
GS  
GS  
GS  
GS  
GS  
GS  
GS  
DS  
D
=5.0V, I =50mA  
D
=0, I =400mA  
S
r
r
r
r
=10V, I =500mA  
Ω
Ω
Ω
Ω
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
D
=10V, I =500mA, T =125°C  
D
J
=5.0V, I =50mA  
D
=5.0V, I =50mA, T =125°C  
D
J
g
=10V, I =200mA  
80  
mS  
FS  
D
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2  
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2  
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2  
R5 (18-January 2010)  
12

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