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CMLDM7002ATRTIN/LEAD PDF预览

CMLDM7002ATRTIN/LEAD

更新时间： 2024-11-20 08:36:07
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CENTRAL /
页数 文件大小 规格书
4页 957K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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CMLDM7002ATRTIN/LEAD 数据手册

 浏览型号CMLDM7002ATRTIN/LEAD的Datasheet PDF文件第2页浏览型号CMLDM7002ATRTIN/LEAD的Datasheet PDF文件第3页浏览型号CMLDM7002ATRTIN/LEAD的Datasheet PDF文件第4页 
CMLDM7002A  
CMLDM7002AG*  
CMLDM7002AJ  
www.centralsemi.com  
SURFACE MOUNT SILICON  
DUAL N-CHANNEL  
ENHANCEMENT-MODE  
MOSFETS  
DESCRIPTION:  
These CENTRAL SEMICONDUCTOR devices are  
dual N-Channel enhancement-mode MOSFETs,  
manufactured by the N-Channel DMOS Process,  
designed for high speed pulsed amplifier and driver  
applications. The CMLDM7002A utilizes the USA  
pinout configuration, while the CMLDM7002AJ utilizes  
the Japanese pinout configuration. These devices offer  
low r  
and low V .  
DS (ON)  
DS(ON)  
MARKING CODES: CMLDM7002A:  
L02  
SOT-563 CASE  
CMLDM7002AG*: C2G  
CMLDM7002AJ:  
Device is Halogen Free by design  
*
02J  
MAXIMUM RATINGS: (T =25°C)  
Drain-Source Voltage  
SYMBOL  
UNITS  
V
A
V
60  
60  
DS  
DG  
GS  
Drain-Gate Voltage  
V
V
V
V
Gate-Source Voltage  
40  
Continuous Drain Current  
I
280  
mA  
mA  
A
D
Continuous Source Current (Body Diode)  
Maximum Pulsed Drain Current  
Maximum Pulsed Source Current  
Power Dissipation (Note 1)  
Power Dissipation (Note 2)  
Power Dissipation (Note 3)  
Operating and Storage Junction Temperature  
Thermal Resistance  
I
280  
S
I
1.5  
DM  
I
1.5  
A
SM  
P
P
P
350  
mW  
mW  
mW  
°C  
D
D
D
300  
150  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
, I  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=20V, V =0  
100  
nA  
GSSF GSSR  
GS  
DS  
DS  
GS  
GS  
DS  
=60V, V =0  
GS  
1.0  
μA  
μA  
mA  
V
DSS  
=60V, V =0, T =125°C  
500  
DSS  
GS  
J
=10V, V =10V  
500  
60  
D(ON)  
DS  
BV  
=0, I =10μA  
D
DSS  
GS(th)  
DS(ON)  
DS(ON)  
SD  
V
V
V
V
=V , I =250μA  
1.0  
2.5  
1.0  
0.15  
1.2  
2.0  
3.5  
3.0  
5.0  
V
DS GS  
D
=10V, I =500mA  
V
GS  
GS  
GS  
GS  
GS  
GS  
GS  
DS  
D
=5.0V, I =50mA  
V
D
=0, I =400mA  
V
S
r
r
r
r
=10V, I =500mA  
Ω
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
D
=10V, I =500mA, T =125°C  
Ω
D
J
=5.0V, I =50mA  
Ω
D
=5.0V, I =50mA, T =125°C  
Ω
D
J
g
=10V, I =200mA  
80  
mS  
FS  
D
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2  
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2  
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2  
R8 (8-June 2015)  
1234

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