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CMLDM7002AGLEADFREE PDF预览

CMLDM7002AGLEADFREE

更新时间： 2024-11-19 13:06:55
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 浏览型号CMLDM7002AGLEADFREE的Datasheet PDF文件第2页 
TM  
CMLDM7002A  
CMLDM7002AJ  
Central  
DESCRIPTION:  
Semiconductor Corp.  
TM  
SURFACE MOUNT PICOmini  
DUAL N-CHANNEL  
ENHANCEMENT-MODE  
SILICON MOSFET  
The CENTRAL SEMICONDUCTOR CMLDM7002A  
and CMLDM7002AJ are special dual versions of the  
2N7002 Enhancement-mode N-Channel Field Effect  
Transistor, manufactured by the N-Channel DMOS  
Process, designed for high speed pulsed amplifier and  
driver applications. The CMLDM7002A utilizes the USA  
pinout configuration, while the CMLDM7002AJ utilizes the  
Japanese pinout configuration. These special Dual  
Transistor devices offer low r  
and low V  
DS (ON).  
DS(ON)  
SOT-563 CASE  
MARKING CODE: CMLDM7002A: L02  
CMLDM7002AJ: 02J  
MAXIMUM RATINGS (T =25°C)  
A
SYMBOL  
UNITS  
Drain-Source Voltage  
Drain-Gate Voltage  
Gate-Source Voltage  
Continuous Drain Current  
V
60  
60  
V
V
DS  
DG  
GS  
V
V
40  
V
I
280  
280  
1.5  
1.5  
350  
300  
150  
mA  
mA  
A
D
Continuous Source Current (Body Diode)  
Maximum Pulsed Drain Current  
Maximum Pulsed Source Current  
Power Dissipation  
I
S
I
I
DM  
A
SM  
P
P
P
mW (Note 1)  
mW (Note 2)  
mW (Note 3)  
D
D
D
Power Dissipation  
Power Dissipation  
Operating and Storage  
Junction Temperature  
T ,T  
J stg  
-65 to +150  
357  
°C  
°C/W  
Thermal Resistance  
Θ
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
100  
100  
1.0  
UNITS  
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=20V, V =0V  
nA  
nA  
µA  
µA  
mA  
V
GSSF  
GSSR  
DSS  
GS  
GS  
DS  
DS  
GS  
GS  
DS  
=20V, V =0V  
DS  
=60V, V =0V  
GS  
=60V, V =0V, T =125°C  
500  
DSS  
GS  
DS  
j
=10V, V  
≥ 2V  
500  
60  
D(ON)  
DS(ON)  
BV  
=0V, I =10µA  
DSS  
D
V
V
V
=V , I =250µA  
1.0  
2.5  
1.0  
0.15  
2.0  
3.5  
3.0  
5.0  
V
GS(th)  
DS GS  
D
=10V, I =500mA  
V
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
GS  
GS  
GS  
GS  
GS  
GS  
DS  
D
=5.0V, I =50mA  
V
D
r
r
r
r
=10V, I =500mA  
Ω
D
=10V, I =500mA, T =125°C  
Ω
Ω
Ω
D
j
=5.0V, I =50mA  
D
=5.0V, I =50mA, T =125°C  
D
j
g
≥ 2V  
, I =200mA  
80  
mmhos  
FS  
DS(ON)  
D
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2  
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2  
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2  
R3 (19-December 2003)  
12

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CMLDM7002AGTRTIN/LEAD CENTRAL

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CMLDM7002AJ CENTRAL

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 		SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CMLDM7002AJBK CENTRAL

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CMLDM7002AJLEADFREE CENTRAL

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 		Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Meta
CMLDM7002AJTR CENTRAL

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CMLDM7002AJTRLEADFREE CENTRAL

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