是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.76 |
Is Samacsys: | N | 最大漏极电流 (Abs) (ID): | 0.28 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.35 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CMLDM7003GTIN/LEAD | CENTRAL |
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Small Signal Field-Effect Transistor, | |
CMLDM7003GTR | CENTRAL |
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Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Meta | |
CMLDM7003GTRLEADFREE | CENTRAL |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
CMLDM7003GTRPBFREE | CENTRAL |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
CMLDM7003J | CENTRAL |
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SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
CMLDM7003JBKPBFREE | CENTRAL |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
CMLDM7003JE | CENTRAL |
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SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
CMLDM7003JE#N/A | CENTRAL |
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Small Signal Field-Effect Transistor, | |
CMLDM7003JEBK | CENTRAL |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
CMLDM7003JEBKPBFREE | CENTRAL |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |