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CM100E3U-24F PDF预览

CM100E3U-24F

更新时间: 2024-09-13 21:16:47
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网通用开关晶体管
页数 文件大小 规格书
4页 80K
描述
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel

CM100E3U-24F 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-XUFM-X5
Reach Compliance Code:unknown风险等级:5.74
外壳连接:ISOLATED最大集电极电流 (IC):100 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X5
元件数量:1端子数量:5
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):500 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:GENERAL PURPOSE SWITCHING
晶体管元件材料:SILICONVCEsat-Max:2.4 V
Base Number Matches:1

CM100E3U-24F 数据手册

 浏览型号CM100E3U-24F的Datasheet PDF文件第2页浏览型号CM100E3U-24F的Datasheet PDF文件第3页浏览型号CM100E3U-24F的Datasheet PDF文件第4页 
MITSUBISHI IGBT MODULES  
CM100E3U-24F  
HIGH POWER SWITCHING USE  
CM100E3U-24F  
¡IC ...................................................................100A  
¡VCES ......................................................... 1200V  
¡Insulated Type  
¡1-element in a pack  
APPLICATION  
Brake  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
Tc measured point  
94  
0.25  
7
80  
23  
2–φ6.5 MOUNTING HOLES  
4
17  
23  
C 1  
E 2  
C2 E1  
13.5  
12  
16  
1MAX  
3–M5 NUTS  
12mm deep  
TAB #110. t=0.5  
2.5  
2.5  
16  
25  
RTC  
C2E1  
E2  
C1  
LABEL  
CIRCUIT DIAGRAM  
Mar.2002  

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