是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XUFM-X20 | 针数: | 35 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.69 | Is Samacsys: | N |
其他特性: | UL RECOGNIZED | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 100 A | 集电极-发射极最大电压: | 1200 V |
配置: | COMPLEX | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X20 | 元件数量: | 7 |
端子数量: | 20 | 最高工作温度: | 175 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 750 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
VCEsat-Max: | 2.25 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CM100MXUB-13T | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
CM100MXUB-13T1 | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
CM100MXUBP-13T | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
CM100MXUBP-13T1 | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
CM100MXUC-24T | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
CM100MXUC-24T1 | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
CM100MXUCP-24T | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
CM100MXUCP-24T1 | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
CM100MXUD-13T | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, | |
CM100MXUD-13T1 | MITSUBISHI |
获取价格 |
Insulated Gate Bipolar Transistor, |