Datasheet > CM100MUDP-13T1

CM100MUDP-13T1

更新时间： 2024-11-17 21:21:15

品牌	Logo	应用领域
三菱 - MITSUBISHI		栅
页数	文件大小	规格书
20页	1665K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

获取价格

技术参数
数据手册

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CM100MUDP-13T1 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.55	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

CM100MUDP-13T1 数据手册

CM100MXUD-13T1/CM100MXUDP-13T1

HIGH POWER SWITCHING USE

INSULATED TYPE

Collector current I_C.............…..................… 1 0 0 A

Collector-emitter voltage V_CES.................. 6 5 0 V

Maximum junction temperature T_{vj m ax}......... 1 7 5 °C

●Flat base type

MXUD

●Copper base plate (Nickel-plating)

●RoHS Directive compliant

●Tin-plating pin terminals

Collector current I_C.............…..................… 1 0 0 A

Collector-emitter voltage V_CES.................. 6 5 0 V

Maximum junction temperature T_{vj m ax}......... 1 7 5 °C

●Flat base type

MXUDP

●Copper base plate (Nickel-plating)

●RoHS Directive compliant

●Tin-plating pressfit terminals

CIB (Converter+Inverter+Chopper Brake)

●UL Recognized under UL1557, File No. E323585

APPLICATION

AC Motor Control, Motion/Servo Control, Power supply, etc.

OPTION (Below options are available.)

●PC-TIM (Phase Change Thermal Interface Material) pre-apply

INTERNAL CONNECTION

Terminal code

16 V

31 N1

32 N1

33 P1

17 V

TH1(22)

TH2(23)

P(38,39,40)

P1(33,34,35)

18 GwP

19 W

GuP(10)

GvP(14)

GwP(18)

20 W

21 W

36 B

37 B

38 P

39 P

40 P

41 N

22 TH1

23 TH2

24 GwN

25 E

B(36,37)

GuN(28)

U(11,12,13)

GvN(26)

V(15,16,17)

GwN(24)

W(19,20,21)

R(1,2,3)

S(4,5,6)

T(7,8,9)

GuP

GB(29)

26 GvN

42 N

43 N

N(41,42,43) N1(30,31,32)

E(25)

GuN

13 U

GvP

E1(27)

30 N1

Publication Date : June 2018

CMH-11888

Ver.1.0

12 3 4 5 6 7...20

中文翻译

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